位置：首页 > IC中文资料第6780页 > IS41LV16100A-50KL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS41LV16100A-50KL | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 |   | |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor | ICSI | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor | ICSI | |
IS41LV16100A-50KL产品属性
- 类型
描述
- 型号
IS41LV16100A-50KL
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTEGRATEDSI |
05+ |
原厂原装 |
13216 |
只做全新原装真实现货供应 |
|||
ISSI Integrated Silicon Soluti |
22+ |
42SOJ |
9000 |
原厂渠道,现货配单 |
|||
ISSI |
23+ |
TSOP44 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
ISSI |
23+ |
TSSOP-44 |
12000 |
全新原装假一赔十 |
|||
ISSI |
21+ |
TSOP44 |
10000 |
原装现货假一罚十 |
|||
ISSI |
24+ |
NA/ |
250 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ISSI |
24+ |
SMD |
35200 |
一级代理分销/放心采购 |
|||
ISSI |
1923+ |
TSOP-44 |
6900 |
只做进口原装品质决定一切价格优惠 |
|||
原装 |
25+23+ |
TSOP-44 |
13998 |
绝对原装正品全新进口深圳现货 |
|||
ISSI |
23+ |
TSOP44 |
50000 |
全新原装正品现货,支持订货 |
IS41LV16100A-50KL芯片相关品牌
IS41LV16100A-50KL规格书下载地址
IS41LV16100A-50KL参数引脚图相关
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IS41LV16100A-50KL数据表相关新闻
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2019-5-8
DdatasheetPDF页码索引
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