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1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

矽成半导体

IS41LV16100/S产品属性

  • 类型

    描述

  • 型号

    IS41LV16100/S

  • 功能描述

    1M x 16(16-Mbit) Dynamic RAM with EDO Page Mode

更新时间:2025-11-24 20:00:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
22+
TSSOP44
100000
代理渠道/只做原装/可含税
ISSI
24+
NA/
3320
原装现货,当天可交货,原型号开票
ISSI
25+
TSOP44
58788
百分百原装现货 实单必成 欢迎询价
ISSI
存储器
TSOP44
41934
ISSI存储芯片IS41LV16100B-50TLI即刻询购立享优惠#长期有货
ISSI
00+
TSOP44
500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI
2430+
SOJ42
8540
只做原装正品假一赔十为客户做到零风险!!
ISSI
23+
BGA
4500
ISSI存储芯片在售
ISSI
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ISS
25+
QFN
18000
原厂直接发货进口原装
INTEGRATEDS
23+
原厂封装
9888
专做原装正品,假一罚百!

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