型号 功能描述 生产厂家 企业 LOGO 操作
IS41C44002

4Mx4 bit Dynamic RAM with EDO Page Mode

DESCRIPTION The ICSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

ICSI

IS41C44002

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

ISSI

矽成半导体

IS41C44002

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

ISSI

矽成半导体

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

ISSI

矽成半导体

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

ISSI

矽成半导体

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

ISSI

矽成半导体

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b

ISSI

矽成半导体

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI 44002 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word

ICSI

16Mb DRAM WITH EDO PAGE MODE

文件:367.96 Kbytes Page:19 Pages

ISSI

矽成半导体

16Mb DRAM WITH EDO PAGE MODE

ISSI

矽成半导体

4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI 44002 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word

ICSI

IS41C44002产品属性

  • 类型

    描述

  • 型号

    IS41C44002

  • 制造商

    ICSI

  • 制造商全称

    Integrated Circuit Solution Inc

  • 功能描述

    4Mx4 bit Dynamic RAM with EDO Page Mode

更新时间:2025-11-19 15:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
1824+
SOJ-26
2950
原装现货专业代理,可以代拷程序
ISSI
25+
40
公司优势库存 热卖中!
ISSI
24+
SOT-252
9600
原装现货,优势供应,支持实单!
ISSI
22+
SOJ
8000
原装正品支持实单
ISSI
24+
NA/
3274
原装现货,当天可交货,原型号开票
ISSI
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ISSI
23+
SOJ
8000
只做原装现货
ISSI
23+
SOJ
7000
INTEGRATEDSI
05+
原厂原装
4217
只做全新原装真实现货供应
ISSI
25+23+
SOJ-24
44778
绝对原装正品全新进口深圳现货

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