型号 功能描述 生产厂家 企业 LOGO 操作
IS41C16257

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

IS41C16257

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

ISSI

矽成半导体

4Mb DRAM WITH FAST PAGE MODE

DESCRIPTION The ISSI IS41C16257C/IS41LV16257C is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes th

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

EDO & Fast Page Mode DRAM

ISSI

矽成半导体

封装/外壳:44-TSOP(0.400",10.16mm 宽),40 引线 包装:卷带(TR) 描述:IC DRAM 4MBIT PARALLEL 40TSOP 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:44-TSOP(0.400",10.16mm 宽),40 引线 包装:卷带(TR) 描述:IC DRAM 4MBIT PARALLEL 40TSOP 集成电路(IC) 存储器

ETC

知名厂家

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16257 and the IC41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, mak

ICSI

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ICSI IC41C16257 and the IC41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, mak

ICSI

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件:160.46 Kbytes Page:17 Pages

ISSI

矽成半导体

IS41C16257产品属性

  • 类型

    描述

  • 型号

    IS41C16257

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    256K x 16(4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

更新时间:2025-11-21 13:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
2023+
TSOP
50000
原装现货
ISSI/芯成
2402+
TSOP
8324
原装正品!实单价优!
ISSI
23+
TSOP-40
8560
受权代理!全新原装现货特价热卖!
ISSI
23+
PLCC
55239
##公司主营品牌长期供应100%原装现货可含税提供技术
ISSI
20+
SOJ
35830
原装优势主营型号-可开原型号增税票
ISSI
2025+
TSOP-40
3550
全新原厂原装产品、公司现货销售
ISSI
2025+
TSOP-40
5000
原装进口价格优 请找坤融电子!
ISSI
25+
116
公司优势库存 热卖中!
ISS
23+
65480
ISSI
25+
TSOP40
3629
原装优势!房间现货!欢迎来电!

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