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IS35价格

参考价格：￥0.7580

型号：IS357 品牌：Isocom Components 2004 L 备注：这里有IS35多少钱，2026年最近7天走势，今日出价，今日竞价，IS35批发/采购报价，IS35行情走势销售排行榜，IS35报价。

型号	功能描述	生产厂家企业	LOGO
IS354	Computer terminals DESCRIPTION The IS354 is an optically coupled isolator consisting of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES • Marked as FPA1. • Current Transfer Ratio MIN. 20 • Isolation Vol	ISOCOM 英国安数光	ISOCOM
IS354	HIGH DENSITY MOUNTING AC INPUT, PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS [Isocom] DESCRIPTION The IS354 is an optically coupled isolator consisting of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES • Marked as FPA1. • Current Transfer Ratio MIN. 20 • Iso	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IS355	Computer terminals DESCRIPTION The IS355 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. FEATURES • Marked as FPD1. • Current Transfer Ratio MIN. 600 • IsolationVoltage(3.75kVRMS, 5.3kVPK) • All e	ISOCOM 英国安数光	ISOCOM
IS357	HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATIORS DESCRIPTION The IS357 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES ● Marked as FPT1. ● Current Transfer Ratio MIN. 50 ● Isolation Voltage (3.75kVRMS,5.3kVPK) ● All	ISOCOM 英国安数光	ISOCOM
IS357	TRANSISTOR OPTOCOUPLERS [ISOCOM] DESCRIPTION The IS357 is a single channel device suitable for use in vending machines, programmable controllers and copiers. The device incorporates an infra red LED and a phototransistor detector. FEATURES 3750V Isolation Subminiature Type Opaque Type Mini-Flat Pack	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IS357B	HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS357 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES ● Marked as FPT1. ● Current Transfer Ratio MIN. 50 ● Isolation Voltage (3.75kVRMS,5.3kVPK) ● All	ISOCOM 英国安数光	ISOCOM
IS357C	IS357C - 光电耦合器, Transistor Output, 1通道, SOP, 4 引脚, 50 mA, 3.75 kV, 200 % The IS357C is a 1-channel 4-pin high density mounting Optically Coupled Isolator consisting of an infrared light emitting diode and NPN silicon phototransistor. It is suitable for industrial systems controllers, signal transmission between systems of different potentials and impedances. ·All electrical parameters 100% tested\n·50mA Forward current\n·6V Reverse voltage\n·170mW Total power dissipation\n·50% Minimum Current transfer ratio\n·3.75kVRMS, 5.3kVPK Isolation voltage\n·Drop in replacement for Sharp PC357;	ISOCOM 英国安数光	ISOCOM
IS357D	HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATIORS DESCRIPTION The IS357 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES ● Marked as FPT1. ● Current Transfer Ratio MIN. 50% ● Isolation Voltage (3.75kVRMS,5.3kVPK) ●	ISOCOM 英国安数光	ISOCOM
IS35ML01G081	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G081-BLA1	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G081-BLA2	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G081-BLE	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G081-BLI	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G081-TLA1	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G081-TLA2	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G081-TLE	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G081-TLI	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G084	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G084-BLA1	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G084-BLA2	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G084-BLE	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G084-BLI	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G084-TLA1	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G084-TLA2	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G084-TLE	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML01G084-TLI	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R	ISSI 矽成半导体	ISSI
IS35ML04G081	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance -	ISSI 矽成半导体	ISSI
IS35ML04G081-TLA1	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance -	ISSI 矽成半导体	ISSI
IS35ML04G081-TLA2	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance -	ISSI 矽成半导体	ISSI
IS35ML04G081-TLE	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance -	ISSI 矽成半导体	ISSI
IS35ML04G081-TLI	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance -	ISSI 矽成半导体	ISSI
IS35ML04G084	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance -	ISSI 矽成半导体	ISSI
IS35ML04G084-TLA1	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance -	ISSI 矽成半导体	ISSI
IS35ML04G084-TLA2	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance -	ISSI 矽成半导体	ISSI
IS35ML04G084-TLE	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance -	ISSI 矽成半导体	ISSI
IS35ML04G084-TLI	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance -	ISSI 矽成半导体	ISSI
IS35MW04G084	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr	ISSI 矽成半导体	ISSI
IS35MW04G084-TLA1	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr	ISSI 矽成半导体	ISSI
IS35MW04G084-TLA2	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr	ISSI 矽成半导体	ISSI
IS35MW04G084-TLE	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr	ISSI 矽成半导体	ISSI
IS35MW04G084-TLI	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr	ISSI 矽成半导体	ISSI
IS35MW04G164	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr	ISSI 矽成半导体	ISSI
IS35MW04G164-TLA1	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr	ISSI 矽成半导体	ISSI
IS35MW04G164-TLA2	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr	ISSI 矽成半导体	ISSI
IS35MW04G164-TLE	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr	ISSI 矽成半导体	ISSI
IS35MW04G164-TLI	1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr	ISSI 矽成半导体	ISSI
IS354	封装/外壳：4-SMD，鸥翼包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：OPTOISO 3.75KV TRANS MINI-FLAT 隔离器光隔离器 - 晶体管，光电输出	ETC 知名厂家	ETC
IS355	IS355 Darlington Output, 4 pin	ISOCOM 英国安数光	ISOCOM
IS357	IS357 Transistor Output, 4 pin, SMD Optocoupler	ISOCOM 英国安数光	ISOCOM
IS357A	HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS 文件：705.07 Kbytes Page：6 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC

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更新时间：2026-7-24 16:36:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市亿联芯电子科技有限公司	IS3020	ISOCOM	26+	DIP6	90000	原厂全新正品旗舰店优势现货	询价
上海金庆电子技术有限公司	IS3022SMT&R	ISOCOM	19+	SMD6	45225	全新发货1-2天	询价
深圳市安富世纪电子有限公司	IS30001300053000DUB	TI	23+	N/A	8000	只做原装现货	询价
天津市博通航睿技术有限公司	IS30001300053000DUB	TI	23+	N/A	7000		询价
京海半导体(深圳)有限公司	IS3020SMTR	Isocom	25+	SMD6	10000	原装现货假一罚十	询价
深圳市豪迈兴电子有限公司	IS3020	Isocom	2602+	NA	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市博中泰实业有限公司	IS3020	ISOCOM	25+	DIP6	90000	全新原装现货	询价
贸泽芯城（深圳）电子科技有限公司	IS3009	ISOCOM	23+	DIP SOP	4699	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市威尔健半导体有限公司	IS3020	ISOCOM	23+	DIPSMD	50000	全新原装正品现货,支持订货	询价

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