型号 功能描述 生产厂家 企业 LOGO 操作
IS28F010

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

IS28F010

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

Intel

英特尔

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F010 is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to

AMD

超威半导体

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

GENERAL DESCRIPTION The Am28F010A is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed t

AMD

超威半导体

1 Megabit CMOS Flash Memory

DESCRIPTION The CAT28F010 is a high speed 128K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second. FEATURES ■ Fast

Catalyst

1024K (128K x 8) CMOS FLASH MEMORY

文件:300.41 Kbytes Page:23 Pages

Intel

英特尔

IS28F010产品属性

  • 类型

    描述

  • 型号

    IS28F010

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    131,072 x 8 CMOS FLASH MEMORY

更新时间:2025-11-5 8:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
23+
TSOP32
98900
原厂原装正品现货!!
ISSI
22+
DIP32
8000
原装正品支持实单
ISSI
2223+
DIP32
26800
只做原装正品假一赔十为客户做到零风险
ISSI
25+
PLCC-32
540
百分百原装正品 真实公司现货库存 本公司只做原装 可
ISSI
23+
TSOP32
98900
原厂原装正品现货!!
ISSI
23+
DIP32
89630
当天发货全新原装现货
ISSI
23+
DIP
8560
受权代理!全新原装现货特价热卖!
ISSI
24+
NA/
4090
原装现货,当天可交货,原型号开票
MOT
23+
PLCC-44
6500
全新原装假一赔十
ICS
24+
SOP
13718
只做原装 公司现货库存

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