型号 功能描述 生产厂家 企业 LOGO 操作
IS28F010

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

IS28F010

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

ISSI

矽成半导体

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

Intel

英特尔

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F010 is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to

AMD

超威半导体

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

GENERAL DESCRIPTION The Am28F010A is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed t

AMD

超威半导体

1 Megabit CMOS Flash Memory

DESCRIPTION The CAT28F010 is a high speed 128K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second. FEATURES ■ Fast

Catalyst

1024K (128K x 8) CMOS FLASH MEMORY

文件:300.41 Kbytes Page:23 Pages

Intel

英特尔

IS28F010产品属性

  • 类型

    描述

  • 型号

    IS28F010

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    131,072 x 8 CMOS FLASH MEMORY

更新时间:2025-12-28 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
NA/
4090
原装现货,当天可交货,原型号开票
ISSI
25+
DIP
54648
百分百原装现货 实单必成 欢迎询价
ISSI
97+
DIP
325
ISSI
25+
NA
880000
明嘉莱只做原装正品现货
ISSI
22+
DIP32
8000
原装正品支持实单
ISSI
2025+
DIP
4950
原装进口价格优 请找坤融电子!
24+
DIP
10
ISSI
2403+
PLCC32
11809
原装现货!欢迎随时咨询!
ISSI
22+
PLCC
2000
原装正品现货
ISSI
23+
PLCC
5000
原装正品,假一罚十

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