IRLZ44Z价格

参考价格:¥5.6684

型号:IRLZ44ZLPBF 品牌:International 备注:这里有IRLZ44Z多少钱,2025年最近7天走势,今日出价,今日竞价,IRLZ44Z批发/采购报价,IRLZ44Z行情走势销售排行榜,IRLZ44Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRLZ44Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRLZ44Z

AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A)

Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRLZ44Z

N-Channel MOSFET Transistor

文件:338.57 Kbytes Page:2 Pages

ISC

无锡固电

IRLZ44Z

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Infineon

英飞凌

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A)

Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A)

Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A)

Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A)

Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A)

Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

Advnaced Process Technology

文件:387.37 Kbytes Page:12 Pages

IRF

Logic Level, Advanced Process Technology, Ultra Low On-Resistance

文件:387.37 Kbytes Page:12 Pages

IRF

Advnaced Process Technology

文件:387.37 Kbytes Page:12 Pages

IRF

Isc N-Channel MOSFET Transistor

文件:299.47 Kbytes Page:2 Pages

ISC

无锡固电

采用 D2-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

IRLZ44Z产品属性

  • 类型

    描述

  • 型号

    IRLZ44Z

  • 功能描述

    MOSFET N-CH 55V 51A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-19 10:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon Technologies
22+
TO2203
9000
原厂渠道,现货配单
Infineon(英飞凌)
24+
TO-263
7793
支持大陆交货,美金交易。原装现货库存。
IR
24+
TO-262
5000
只做原装公司现货
IR
24+
N/A
8000
全新原装正品,现货销售
IR
21+
TO-220
10000
原装现货假一罚十
IR
24+
NA/
3295
原装现货,当天可交货,原型号开票
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
IR
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
IR/VISHAY
23+
TO-220
50000
全新原装正品现货,支持订货
IR
21+
TO-220铁头
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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