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IRLZ44Z价格
参考价格:¥5.6684
型号:IRLZ44ZLPBF 品牌:International 备注:这里有IRLZ44Z多少钱,2025年最近7天走势,今日出价,今日竞价,IRLZ44Z批发/采购报价,IRLZ44Z行情走势销售排行榜,IRLZ44Z报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRLZ44Z | AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | ||
IRLZ44Z | AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | ||
IRLZ44Z | N-Channel MOSFET Transistor 文件:338.57 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRLZ44Z | 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 | Infineon 英飞凌 | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
Advnaced Process Technology 文件:387.37 Kbytes Page:12 Pages | IRF | |||
Logic Level, Advanced Process Technology, Ultra Low On-Resistance 文件:387.37 Kbytes Page:12 Pages | IRF | |||
Advnaced Process Technology 文件:387.37 Kbytes Page:12 Pages | IRF | |||
Isc N-Channel MOSFET Transistor 文件:299.47 Kbytes Page:2 Pages | ISC 无锡固电 | |||
采用 D2-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET | Infineon 英飞凌 |
IRLZ44Z产品属性
- 类型
描述
- 型号
IRLZ44Z
- 功能描述
MOSFET N-CH 55V 51A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
Infineon(英飞凌) |
24+ |
TO-263 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
TO-262 |
5000 |
只做原装公司现货 |
|||
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
IR |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
|||
IR |
24+ |
NA/ |
3295 |
原装现货,当天可交货,原型号开票 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR/VISHAY |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
21+ |
TO-220铁头 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
IRLZ44Z规格书下载地址
IRLZ44Z参数引脚图相关
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IRLZ44Z数据表相关新闻
IRLZ44NPBF封装 / 箱体:TO-220-3
IRLZ44NPBF
2021-9-17IRLZ44NPBF TO-220 INFINEON/英飞凌 MOSFET管 全新现货 进口原装
IRLZ44NPBF TO-220 INFINEON/英飞凌 MOSFET管 全新现货 进口原装
2021-7-20IRLZ44NPBF InfineonTO-220-3 原装正品供应
IRLZ44NPBF InfineonTO-220-3 原装正品供应
2021-6-29IRM-3638T
IRM-3638T,当天发货0755-82732291全新原装现货或门市自取.
2020-11-15IRM-H638T/TR2
IRM-H638T/TR2,全新原装现货当天发货或门市自取0755-82732291.
2020-2-17IRMCK203-高性能传感器运动控制IC
特点 完整的永磁交流电机的无传感器控制IC 需要无相电压反馈传感 正弦电流波形与同步旋转坐标系闭环电流控制 高启动转矩和流畅的速度升温 IR2175的电流感应的高电压IC的直接接口 在启动时配置的起动转矩的自动重试 多功能的损失最小化空间矢量PWM 串行通信接口(RS232C,RS422,SPI) 参数存储1K位串行EEPROM独立运作的I2C串行接口 缺相/过流/过压保护 7位离散量I / Ø测序和状态
2012-12-5
DdatasheetPDF页码索引
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