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IRLZ44价格
参考价格：￥21.2474
型号：IRLZ44 品牌：Vishay 备注：这里有IRLZ44多少钱，2026年最近7天走势，今日出价，今日竞价，IRLZ44批发/采购报价，IRLZ44行情走势销售排行榜，IRLZ44报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRLZ44 | N-CHANNEL LOGIC LEVEL MOSFET N-CHANNEL LOGIC LEVEL MOSFET | Samsung 三星 |   | |
IRLZ44 | Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V & 5V • 17 | IRF | | |
IRLZ44 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio | VishayVishay Siliconix 威世威世科技公司 | | |
IRLZ44 | Power MOSFET FEATURES • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | |
IRLZ44 | Power MOSFET 文件：1.7418 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRLZ44 | Power MOSFET 文件：1.7418 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRLZ44 | N-CHANNEL LOGIC LEVEL MOSFET 文件：240.15 Kbytes Page：4 Pages | ARTSCHIP | | |
IRLZ44 | Power MOSFET 文件：1.81737 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRLZ44 | N-CHANNEL LOGIC LEVEL MOSFET | Samsung 三星 | | |
IRLZ44 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRLZ44 | Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A) | Infineon 英飞凌 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET HEXFET® Power MOSFET | IRF | | ||
Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET짰 Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dV/dt Rating • Logic-Level Gate Driv | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It prov | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It prov | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It prov | VishayVishay Siliconix 威世威世科技公司 | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
Power MOSFET 文件：1.7418 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
ADVANCED POWER MOSFET 文件：451.49 Kbytes Page：9 Pages | Samsung 三星 | | ||
isc N-Channel MOSFET Transistor 文件：280.52 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor 文件：338.23 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor 文件：338.23 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Logic-Level Gate Drive 文件：189.26 Kbytes Page：11 Pages | IRF | | ||
Advnaced Process Technology 文件：228.92 Kbytes Page：9 Pages | IRF | | ||
Advnaced Process Technology 文件：228.92 Kbytes Page：9 Pages | IRF | | ||
Logic-Level Gate Drive 文件：189.26 Kbytes Page：11 Pages | IRF | | ||
Logic-Level Gate Drive 文件：189.26 Kbytes Page：11 Pages | IRF | | ||
Logic-Level Gate Drive 文件：345.9 Kbytes Page：11 Pages | IRF | | ||
Advnaced Process Technology 文件：345.9 Kbytes Page：11 Pages | IRF | | ||
Advnaced Process Technology 文件：345.9 Kbytes Page：11 Pages | IRF | | ||
Logic-Level Gate Drive 文件：189.26 Kbytes Page：11 Pages | IRF | | ||
Logic-Level Gate Drive 文件：189.26 Kbytes Page：11 Pages | IRF | | ||
Logic-Level Gate Drive 文件：189.26 Kbytes Page：11 Pages | IRF | | ||
Power MOSFET 文件：1.7418 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.81737 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：483.54 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET 文件：837.04 Kbytes Page：9 Pages | IRF | | ||
Power MOSFET 文件：483.54 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel MOSFET Transistor 文件：338.57 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advnaced Process Technology 文件：387.37 Kbytes Page：12 Pages | IRF | | ||
Logic Level, Advanced Process Technology, Ultra Low On-Resistance 文件：387.37 Kbytes Page：12 Pages | IRF | | ||
Advnaced Process Technology 文件：387.37 Kbytes Page：12 Pages | IRF | | ||
Isc N-Channel MOSFET Transistor 文件：299.47 Kbytes Page：2 Pages | ISC 无锡固电 | |
IRLZ44产品属性
- 类型
描述
- 型号
IRLZ44
- 功能描述
MOSFET N-Chan 60V 50 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-220 |
5000 |
只做原装 有挂有货 假一罚十 |
|||
IR |
19+ |
TO-263 |
21000 |
||||
IR |
16+ |
TO-220 |
36000 |
原装正品,优势库存81 |
|||
INFINEON |
25+ |
TO-220 |
12000 |
原装正品!!!优势库存!0755-83210901 |
|||
Infineon(英飞凌) |
25+ |
TO-220(TO-220-3) |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
INFINEON/英飞凌 |
23+/24+ |
TO-220 |
9865 |
专营品牌.原装正品.终端BOM表可配单 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
6741 |
全新原装现货特价销售,欢迎来电查询 |
|||
INFINEON |
2021 |
TO-220 |
10000 |
全新原装公司现货
|
IRLZ44规格书下载地址
IRLZ44参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRM-60
- IRM-500
- IRM-45
- IRM-30
- IRM-20
- IRM1600
- IRM-15
- IRM-10-24
- IRM-10-15
- IRM-10-12
- IRM-10
- IRM-05-5
- IRM-05-3.3
- IRM-05-24
- IRM-05-15
- IRM-05-12
- IRM-05
- IRM048U
- IRM047U
- IRM046U
- IRM-03
- IRM-02
- IRM-01
- IRLZ4S
- IRLZ44ZSTRLPBF/BKN
- IRLZ44ZSTRLPBF
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- IRLZ44SPBF
- IRLZ44S
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- IRLZ44NSTRLPBF-CUTTAPE
- IRLZ44NSTRLPBF
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- IRLZ44NPBF
- IRLZ44N
- IRLZ44A
- IRLZ40
- IRLZ34S
- IRLZ34PBF
- IRLZ34NSTRLPBF-CUTTAPE
- IRLZ34NSTRLPBF
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- IRLZ34N
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- IRLZ34
- IRLZ24S
- IRLZ24PBF
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- IRLZ24N
- IRLZ24LPBF
- IRLZ24L
- IRLZ24
- IRLZ14SPBF
- IRLZ14S
- IRLZ14PBF
- IRLZ14L
- IRLZ14
- IRLU9343PBF
- IRLU8743PBF
- IRLU8729PBF
- IRLU8729-701PBF
- IRLU8726PBF
- IRLU8721PBF
- IRLU120
- IRLU110
- IRLU024
- IRLU014
- IRLS530
- IRLR120
- IRLR110
- IRLR024
IRLZ44数据表相关新闻
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IRLZ44NPBF InfineonTO-220-3 原装正品供应
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2021-6-24
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