AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

Advanced Process Technology

文件：1.09339 Mbytes Page：11 Pages

isc Silicon NPN Power Transistor

文件：267.37 Kbytes Page：2 Pages

采用 I-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

Advanced Process Technology

文件：333.59 Kbytes Page：11 Pages

THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR

Features • Output current in excess of 1.0 A • Low dropout voltage VDIF = 0.7 V TYP. (IO = 1 A) • On-chip over-current and thermal protection circuit • On-chip output transistor safe operating area protection circuit

500mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The The AMS2905 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower lo

140 MHz Center Frequency

文件：72.57 Kbytes Page：3 Pages

ADSL LINE TRANSFORMER

文件：284.39 Kbytes Page：1 Pages

CPRI and 10G Ethernet Data Recovery IC with Amp/EQ from 614.4 Mbps to 10.3125 Gbps

文件：666.06 Kbytes Page：27 Pages