60V N-Channel Enhancement Mode Power MOSFET

General Description The UMW IRLR2905TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Tec

60V N-Channel Enhancement Mode Power MOSFET

General Description The IRLR2905TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technol

Advanced Process Technology

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N-Channel 6 0-V (D-S) MOSFET

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Advanced Process Technology

文件：319.87 Kbytes Page：11 Pages

THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR

Features • Output current in excess of 1.0 A • Low dropout voltage VDIF = 0.7 V TYP. (IO = 1 A) • On-chip over-current and thermal protection circuit • On-chip output transistor safe operating area protection circuit

500mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The The AMS2905 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower lo

140 MHz Center Frequency

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ADSL LINE TRANSFORMER

文件：284.39 Kbytes Page：1 Pages

CPRI and 10G Ethernet Data Recovery IC with Amp/EQ from 614.4 Mbps to 10.3125 Gbps

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