HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

60V N-Channel Enhancement Mode Power MOSFET

General Description The IRLR2905TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technol

Advanced Process Technology

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N-Channel MOSFET Transistor

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HEXFET Power MOSFET

VDSS= 55V RDS(on)= 0.027Ω ID= 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

60V N-Channel Enhancement Mode Power MOSFET

General Description The UMW IRLR2905TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Tec

60V N-Channel Enhancement Mode Power MOSFET

General Description The IRLR2905TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technol

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：MOSFET N-CH 55V 36A DPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

Logic-Level Gate Drive

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Logic-Level Gate Drive

文件：319.87 Kbytes Page：11 Pages

Advanced Process Technology

文件：319.87 Kbytes Page：11 Pages

N-Channel 6 0-V (D-S) MOSFET

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Advanced Process Technology

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Advanced Process Technology

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N-Channel MOSFET Transistor

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Advanced Process Technology

文件：333.59 Kbytes Page：11 Pages

Advanced Process Technology

文件：333.59 Kbytes Page：11 Pages

Advanced Process Technology

文件：333.59 Kbytes Page：11 Pages

Advanced Process Technology

文件：333.59 Kbytes Page：11 Pages

N-Channel 60 V (D-S) MOSFET

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Logic Level

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THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR

Features • Output current in excess of 1.0 A • Low dropout voltage VDIF = 0.7 V TYP. (IO = 1 A) • On-chip over-current and thermal protection circuit • On-chip output transistor safe operating area protection circuit

500mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The The AMS2905 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower lo

140 MHz Center Frequency

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ADSL LINE TRANSFORMER

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CPRI and 10G Ethernet Data Recovery IC with Amp/EQ from 614.4 Mbps to 10.3125 Gbps

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