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IRLR120价格
参考价格:¥7.5736
型号:IRLR120NHR 品牌:International Rectifier 备注:这里有IRLR120多少钱,2024年最近7天走势,今日出价,今日竞价,IRLR120批发/采购报价,IRLR120行情走势销售排行榜,IRLR120报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRLR120 | HEXFETPowerMOSFET Description ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingt | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRLR120 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | ||
IRLR120 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRLR120,SiHLR120) •Straightlead(IRLU120,SiHLU120) •AvailableintapeandreMel •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | ||
IRLR120 | PowerMOSFET 文件:1.27492 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | ||
IRLR120 | iscN-ChannelMOSFETTransistor 文件:332.83 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRLR120,SiHLR120) •Straightlead(IRLU120,SiHLU120) •AvailableintapeandreMel •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技 | |||
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
100VN-ChannelMOSFET VDS(V)=100V ID=10A(VGS=10V) RDS(ON) | UMWUMW 友台友台半导体 | |||
SurfaceMount(IRLR120N) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:1.27492 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
iscN-ChannelMOSFETTransistor 文件:373.74 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedpowerMOSFET 文件:228.49 Kbytes Page:7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
AdvancedProcessTechnology 文件:935.92 Kbytes Page:10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
N-ChannelMOSFETTransistor 文件:335.02 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSFET(Vdss=100V,Rds(on)=0.185ohm,Id=10A) 文件:173.96 Kbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
SurfaceMount(IRLR120N) 文件:299.66 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
AdvancedProcessTechnology 文件:275.97 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:275.97 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel100V(D-S)MOSFET 文件:979.57 Kbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
HEXFETPowerMOSFET 文件:1.81612 Mbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PrecisionWirewoundResistors 100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst | Riedon Riedon Inc. | |||
SHIELDEDSMTPOWERINDUCTORS ●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment | PRODUCTWELLProductwell Precision Elect.CO.,LTD 寶德華股台灣寶德華股有限公司 | |||
THREADEDINSERT,BLIND,REGULARHEADSTYLELIGHTDUTY-PRESSIN 文件:106.68 Kbytes Page:1 Pages | WITTEN Witten Company, Inc. | |||
PrecisionWirewoundResistors 文件:318.25 Kbytes Page:2 Pages | Riedon Riedon Inc. | |||
TemperatureSensorsLineGuide 文件:736.09 Kbytes Page:11 Pages | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 |
IRLR120产品属性
- 类型
描述
- 型号
IRLR120
- 功能描述
MOSFET N-Chan 100V 7.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
23+ |
D-Pak |
30000 |
晶体管-分立半导体产品-原装正品 |
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IR/国际整流器 |
22+ |
NA |
50000 |
我司100%原装正品现货,现货众多欢迎加微信 |
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IR |
22+ |
TO-252 |
2315 |
长源创新-只做原装---假一赔十 |
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INFINEON TECHNOLOGIES AG |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
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IR |
23+ |
TO-252-2(DPAK) |
90000 |
只做原厂渠道价格优势可提供技术支持 |
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IR |
13+ |
TO-252 |
100000 |
深圳市勤思达科技有限公司主营IR系列全新原装正品,公司现货供应IRLR120NTRPBF,绝对正品,欢迎咨询洽谈。 |
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VISHAY(威世) |
23+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
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Infineon(英飞凌) |
23+ |
TO-252 |
13316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
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IT |
23+ |
TO252 |
4050 |
原厂原装正品 |
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IR |
23+ |
TO-252 |
22000 |
原装现货假一罚十 |
IRLR120规格书下载地址
IRLR120参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRLZ44N
- IRLZ44A
- IRLZ44
- IRLZ40
- IRLZ34S
- IRLZ34N
- IRLZ34L
- IRLZ34
- IRLZ24S
- IRLZ24N
- IRLZ24L
- IRLZ24
- IRLZ14S
- IRLZ14L
- IRLZ14
- IRLU120
- IRLU110
- IRLU024
- IRLU014
- IRLS530
- IRLR2905ZPBF
- IRLR2905TRPBF/BKN
- IRLR2905TRPBF
- IRLR2905TRLPBF
- IRLR2905PBF
- IRLR2705TRPBF-CUTTAPE
- IRLR2705TRPBF
- IRLR2705TRLPBF
- IRLR2705PBF
- IRLR2703TRPBF-CUTTAPE
- IRLR2703TRPBF
- IRLR2703TRLPBF
- IRLR2703PBF
- IRLR2305
- IRLR120TRPBF
- IRLR120PBF
- IRLR120NTRPBF
- IRLR120NTRLPBF
- IRLR120NPBF
- IRLR120NHR
- IRLR110TRPBF
- IRLR110PBF
- IRLR110
- IRLR024TRPBF
- IRLR024PBF
- IRLR024NTRPBF-CUTTAPE
- IRLR024NTRPBF
- IRLR024NTRLPBF
- IRLR024NPBF
- IRLR024
- IRLR014TRPBF-CUTTAPE
- IRLR014TRPBF
- IRLR014TRLPBF
- IRLR014PBF
- IRLR014
- IRLP3034PBF
- IRLMS6802TRPBF
- IRLMS6802TR
- IRLMS6702TRPBF-CUTTAPE
- IRLMS6702TRPBF
- IRLMS5703TRPBF/BKN
- IRLM210
- IRLL110
- IRLL014
- IRLI640
- IRLI620
- IRLI520
- IRLF230
- IRLF120
- IRLD120
- IRLD110
- IRLD024
- IRLD014
- IRL830T
- IRL830S
- IRL81A
- IRL8114
- IRL8113
IRLR120数据表相关新闻
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DdatasheetPDF页码索引
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