P−CHANNEL MOSFET

FEATURES VDS (V) = -30V RDS(ON)

-30V 单 P 通道 StrongIRFET ™功率 MOSFET，采用 SOT-23 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)\n• Reduced design complexity in high-side configuration (vs N-channel device)\n• Easier ;

丝印代码：PBTP0；P−CHANNEL MOSFET

FEATURES VDS (V) = -30V RDS(ON)

丝印代码：A79T；P-Channel 20-V(D-S) MOSFET

Application PWM Applications Load Switch Power Management

Compatible with existing Surface Mount Techniques

文件：200.05 Kbytes Page：10 Pages

Compatible with existing Surface Mount Techniques

文件：200.05 Kbytes Page：10 Pages

HEXFETPower MOSFET

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P-Channel 30 V (D-S) MOSFET

文件：1.09662 Mbytes Page：9 Pages

-30V P-Channel enhancement mode power field effect transistors

场效应管

HEXFET Power MOSFET

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100Mbps Ethernet Fiber/Twisted Pair Single Chip Media Converter

[DAVICOM] General Description The DM9301 is a physical-layer, single-chip, low power media converter for 100BASE-TX/FX full duplex repeater applications. On the TX media side, it provides a direct interface to Unshielded Twisted Pair Cable 5 (UTP5) for 100BASE-TX Fast Ethernet. On the FX media

SILICON NPN TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR SE9300, 01, 02 are Silicon NPN EPitaxial Base, Monolithic Diffused Resistor Type Darlington Construction Power Transistors designed for audio amplifiers and medium power linear and switching applications.

PIN DIODE

DESCRIPTION The UM9301 PIN Diode utilizes special overall chip geometry with an extremely thick intrinsic “I” region, to offer unique capabilities in both RF switch and attenuator applications. Volume production also makes the diode an economical choice suitable for many commercial low power eq

Entry-level ARM9 System-on-chip Processor

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PWM, PWM/PFM Switching Step-Up & Down DC/DC Converter Controller ICs

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