Power MOSFET(Vdss=-30V)

Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A therma

SOT-23 Plastic-Encapsulate MOSFETS

General Description The IRLML5203 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

SOT-23 Plastic-Encapsulate MOSFETS

文件：2.09412 Mbytes Page：8 Pages

Plastic-Encapsulate Mosfets

文件：516.35 Kbytes Page：5 Pages

Plastic-Encapsulate Mosfets

-30V P-Channel MOSFET

P-Ch MOSFET

HEXFET Power MOSFET

文件：199.79 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：199.79 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：199.79 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：199.83 Kbytes Page：10 Pages

HEXFET짰Power MOSFET

文件：186.96 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：199.83 Kbytes Page：10 Pages

SE P-Channel Enhancement Mode Power MOSFET

文件：1.11491 Mbytes Page：6 Pages

P-Channel 30 V (D-S) MOSFET

文件：1.09487 Mbytes Page：9 Pages

HEXFETPower MOSFET

文件：259.75 Kbytes Page：2 Pages

HEXFET

Power MOSFET

文件：195.18 Kbytes Page：9 Pages

4A SCRs

DESCRIPTION Thanks to highly sensitive triggering levels, the TS420 series is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, overvoltage crowbar protection for low power supplies, ... Available in through-hole or

Die Cast Box With Card Guides Size L, Unpainted

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OPTICS CATALOGUE

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24 (7/32) AWG Tinned Copper

文件：411.49 Kbytes Page：4 Pages

400MHz Slew Enhanced VFAs

文件：1.7348 Mbytes Page：17 Pages