Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A??

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A⑤)

Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A??

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

HEXFET Power MOSFET

VDSS = 30V R DS(on) = 0.007Ω ID = 61A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

HEXFET Power MOSFET

VDSS = 30V R DS(on) = 0.007Ω ID = 61A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

HEXFET Power MOSFET

T-1 Subminiature Lamps

T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin

high Current Toroid Inductors

[J.W.Miller]

FEMALE THREADED STANDOFFS

[KEYSTONE] THREADED STANDOFFS

Extra Dome Plugs

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LOG114EVM User Guide

文件：571.52 Kbytes Page：21 Pages