Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissip

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Logic-level gate drive;

HEXFET Power MOSFET

HEXFET Power Mosfet

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HEXFET Power MOSFET

Power MOSFET

文件：1.02455 Mbytes Page：9 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 150 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.18Ω ID = 18 A FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 20

HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.18廓 , ID = 17A )

HEXFET-R POWER MOSFET

Power MOSFETs

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

Power MOSFETs

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

HEXFET Power MOSFET

Power MOSFET

isc N-Channel MOSFET Transistor

文件：280.92 Kbytes Page：2 Pages

Power MOSFET

文件：1.02455 Mbytes Page：9 Pages

Repetitive avalanche rated

文件：994.86 Kbytes Page：9 Pages

Power MOSFET

文件：1.01484 Mbytes Page：10 Pages

Power MOSFET

文件：1.01484 Mbytes Page：10 Pages

Power MOSFET

文件：1.01484 Mbytes Page：10 Pages

High Current Transistors(PNP Silicon)

High Current Transistors PNP Silicon

High Current Transistors

High Current Transistors PNP Silicon

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 60 Volts CURRENT - 6 Ampere)

VOLTAGE 20 to 60 Volts CURRENT 6.0 Ampers FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los