Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Power MOSFET

文件：1.14817 Mbytes Page：9 Pages

Power MOSFET

Power MOSFET

文件：1.14656 Mbytes Page：9 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 100V ♦ Lower RDS(ON): 0.046Ω(Typ.)

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel MOSFET Transistor

• DESCRITION • It is intended for general purpose switching applications • FEATURES • Low drain-source on-resistance: RDS(on) ≤ 44mΩ (max) • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable oper

Isc N-Channel MOSFET Transistor

• FEATURES • With To-262 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK(TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK(TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK(TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

Power MOSFET

Power MOSFET

文件：1.14817 Mbytes Page：9 Pages

HEXFET Power MOSFET

文件：366.19 Kbytes Page：5 Pages

Advanced Power MOSFET

isc N-Channel MOSFET Transistor

文件：299.56 Kbytes Page：2 Pages

ADVANCED PROCESS TECHNOLOGY

文件：1.05219 Mbytes Page：9 Pages

HEXFET짰 Power MOSFET

文件：1.05123 Mbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：1.05219 Mbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：920.47 Kbytes Page：11 Pages

N-Channel 100-V (D-S) MOSFET

文件：1.04375 Mbytes Page：8 Pages

ADVANCED PROCESS TECHNOLOGY

文件：920.47 Kbytes Page：11 Pages

Power MOSFET

文件：1.14656 Mbytes Page：9 Pages

HEXFET POWER MOSFET

文件：186.87 Kbytes Page：6 Pages

Power MOSFET

文件：318.59 Kbytes Page：10 Pages

Power MOSFET

文件：318.59 Kbytes Page：10 Pages

N-Channel 100-V (D-S) MOSFET

文件：1.04367 Mbytes Page：8 Pages

Pentium 4 Processors Supporting Hyper-Threading Technology

Introduction The Intel® Pentium® 4 processor on 90 nm process in the 775-land package is a follow on to the Pentium 4 processor in the 478-pin package with enhancements to the Intel NetBurst® microarchitecture. The Pentium 4 processor on 90 nm process in the 775-land package uses FlipChip Land Gr

PISTON SEALS

DESCRIPTION The BECA 540 profile is a single acting piston seal composed of a profiled, filled PTFE U-ring type seal and a V-spring that is resistant to corrosion. The BECA 549 profile is specially designed for applications where the seal is in contact with food products. It is characteri

Security & Sound, #20-20c, BC, CMR

Product Description Security & Sound Cable, Riser-CMR, 20-20 AWG stranded bare copper conductors with PVC insulation, PVC jacket with ripcord

Ethernet Modbus TCP to 32 Open-Collector Outputs

Features • 10/100BaseT Ethernet Modbus TCP interface • 32 open collector outputs • Removable screw terminals simplify field wiring • Status indicator LEDs for Communication, Fault, and Power • Input power via terminal block or modular connector • Optional DIN rail or table mount • Sealevel

5MM LED

文件：116 Kbytes Page：5 Pages