HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.026Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

采用 TO-220 封装的 100V 单 N 沟道功率 MOSFET

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.026廓 , ID = 55A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Isc N-Channel MOSFET Transistor

文件：300.69 Kbytes Page：2 Pages

ADVANCED PROCESS TECHNOLOGY

文件：1.54679 Mbytes Page：9 Pages

N-Channel 100-V (D-S) MOSFET

文件：981.62 Kbytes Page：7 Pages

ADVANCED PROCESS TECHNOLOGY

文件：1.54679 Mbytes Page：9 Pages

N 沟道功率 MOSFET

ADVANCED PROCESS TECHNOLOGY

文件：690.5 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：690.5 Kbytes Page：11 Pages

Tiny OTG Adapter - USB Micro to USB

文件：253.58 Kbytes Page：3 Pages

10 MHz BIPOLAR LOGARITHMIC AMPLIFIER

文件：399.66 Kbytes Page：6 Pages

875 MHz Center Frequency

文件：44.44 Kbytes Page：2 Pages

130A竊?00V N-CHANNEL MOSFET

文件：286.95 Kbytes Page：6 Pages

Zero Drift operational amplifiers

文件：385.3 Kbytes Page：15 Pages