位置：首页 > IC中文资料第6858页 > IRHG63110
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRHG63110 | 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 文件：195.17 Kbytes Page：14 Pages | IRF |   | |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) 100V, Combination 2N-2P-CHANNEL International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized f | IRF | | ||
438 PCB Barrier Terminal Strip, 600V 文件：64.8 Kbytes Page：2 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
438 PCB Barrier Terminal Strip, 600V 文件：64.8 Kbytes Page：2 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
438 PCB Barrier Terminal Strip, 600V 文件：64.8 Kbytes Page：2 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |
IRHG63110产品属性
- 类型
描述
- 型号
IRHG63110
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
SOP |
8000 |
专注配单,只做原装进口现货 |
|||
IR |
23+ |
SOP |
8000 |
只做原装现货 |
|||
IR |
18+ |
原厂原装假一赔十 |
38 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
|||
IR |
24+ |
N/A |
90000 |
原厂正规渠道现货、保证原装正品价格合理 |
|||
IR |
24+ |
12 |
全新原装 |
||||
IR |
22+ |
SOP |
6000 |
终端可免费供样,支持BOM配单 |
|||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IR |
23+ |
SOP |
7000 |
IRHG63110芯片相关品牌
IRHG63110规格书下载地址
IRHG63110参数引脚图相关
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IRHG63110数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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2020-1-12IRL2203NPBF 原装现货热卖！！！！
IRL2203NPBF 厂家：IR 封装：TO-220 现货热卖 原厂原包装，只做原装，假一赔万 !!! 欢迎致电 上海意淼张小姐 18301798078 021-61316368 QQ:2719102545
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DdatasheetPDF页码索引
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