位置：首页 > IC中文资料第1120页 > IRGSL6B60KPBF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGSL6B60KPBF | INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing | IRF |   | |
IRGSL6B60KPBF | 封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR） 描述：IGBT 600V 13A 90W TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 is available in PbF as a Lead-Free Benefits • Benchmark Eff | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing | IRF | |
IRGSL6B60KPBF产品属性
- 类型
描述
- 型号
IRGSL6B60KPBF
- 功能描述
IGBT N-CH 600V 13A TO-262
- RoHS
是
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
-
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿（最大）
1200V Vge,
- Ic时的最大Vce（开）
3V @ 15V，100A 电流 -
- 集电极(Ic)（最大）
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
IR |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
IR |
24+ |
IGBT |
220 |
现货供应 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
23+ |
TO-262 |
21368 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
Infineon Technologies |
22+ |
TO262 |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
NA |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
Infineon Technologies |
25+ |
TO-262-3 长引线 I?Pak TO-26 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IR |
2015 |
模块 |
300 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
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DdatasheetPDF页码索引
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