型号 功能描述 生产厂家&企业 LOGO 操作
IRGSL6B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrentSharing

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRGSL6B60KPBF

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR) 描述:IGBT 600V 13A 90W TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-220isavailableinPbFasaLead-Free Benefits •BenchmarkEff

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrentSharing

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRGSL6B60KPBF产品属性

  • 类型

    描述

  • 型号

    IRGSL6B60KPBF

  • 功能描述

    IGBT N-CH 600V 13A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> IGBT - 单路

  • 系列

    -

  • 标准包装

    30

  • 系列

    GenX3™ IGBT

  • 类型

    PT 电压 -

  • 集电极发射极击穿(最大)

    1200V Vge,

  • Ic时的最大Vce(开)

    3V @ 15V,100A 电流 -

  • 集电极(Ic)(最大)

    200A 功率 -

  • 最大

    830W

  • 输入类型

    标准

  • 安装类型

    通孔

  • 封装/外壳

    TO-247-3

  • 供应商设备封装

    PLUS247?-3

  • 包装

    管件

更新时间:2024-5-16 17:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+
TO-262
5623
只做原装正品现货!或订货假一赔十!
IR
23+
TO-262
6000
原装正品,支持实单
Infineon Technologies
21+
TO262
13880
公司只售原装,支持实单
VISHAY-威世
24+25+/26+27+
TO-262-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
IR
2020+
TO-262
16800
绝对原装进口现货,假一赔十,价格优势!?
Infineon Technologies
22+
TO262
9000
原厂渠道,现货配单
IR
22+
TO-262
8900
英瑞芯只做原装正品!!!
Infineon Technologies
24+
TO-262-3,长引线,I?Pak,TO-26
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
Infineon Technologies
23+
原装
8000
只做原装现货
IR
22+
TO-262
25000
只做原装进口现货,专注配单

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