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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 Package. Benefits • Benchmark Efficiency for Motor Control.

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 Package. • Lead-Free Benefits • Benchmark Efficiency for M

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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更新时间:2025-11-5 14:14:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
TO-220
20300
IR原装特价IRGB5B120KD即刻询购立享优惠#长期有货
INFINEON/IR
TO-220
50000
IR
1202+
TO220
12520
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
2022+
TO-220AB
12888
原厂代理 终端免费提供样品
IR
21+
TO-220
30000
百域芯优势 实单必成 可开13点增值税
IR
2450+
TO220
6885
只做原装正品假一赔十为客户做到零风险!!
IR
24+
TO220
3000
原装现货假一罚十
IR
24+
NA/
170
优势代理渠道,原装正品,可全系列订货开增值税票
IR
23+
TO-220
50000
全新原装正品现货,支持订货
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务

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