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IRGSL4B60KD1价格
参考价格：￥8.8046
型号：IRGSL4B60KD1PBF 品牌：IR 备注：这里有IRGSL4B60KD1多少钱，2024年最近7天走势，今日出价，今日竞价，IRGSL4B60KD1批发/采购报价，IRGSL4B60KD1行情走势销售排行榜，IRGSL4B60KD1报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGSL4B60KD1 | INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerform | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRGSL4B60KD1 | INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
IRGSL4B60KD1 | INSULATEDGATEBIPOLARTRANSISTORWITH 文件：376.95 Kbytes Page：15 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerform | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR） 描述：IGBT NPT 600V 11A TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerform | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerform | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerform | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITH 文件：376.95 Kbytes Page：15 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
IRGSL4B60KD1产品属性
- 类型
描述
- 型号
IRGSL4B60KD1
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR WITH
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2015+ |
TO-262 |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
2016+ |
TO-262 |
6528 |
房间原装进口现货假一赔十 |
|||
IR |
23+ |
TO-262 |
8600 |
全新原装现货 |
|||
IR |
22+ |
NA |
68932 |
全新原装正品现货 |
|||
Infineon Technologies |
23+ |
TO262 |
9000 |
原装正品，支持实单 |
|||
Infineon Technologies |
21+ |
TO262 |
13880 |
公司只售原装,支持实单 |
|||
IR |
23+ |
TO-262 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
IR/International Rectifier/国 |
21+ |
TO262 |
343 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
TO262 |
6000 |
原装现货,长期供应,终端可账期 |
||||
IR |
2023+ |
TO262 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
IRGSL4B60KD1芯片相关品牌
IRGSL4B60KD1规格书下载地址
IRGSL4B60KD1参数引脚图相关
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- isd1420
- IRL1404ZSTRLPBF
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- IRFZ48Z
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IRGSL4B60KD1数据表相关新闻
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DdatasheetPDF页码索引
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