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IRGSL10B60KDPBF价格
参考价格：￥12.5883
型号：IRGSL10B60KDPBF 品牌：IR 备注：这里有IRGSL10B60KDPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRGSL10B60KDPBF批发/采购报价，IRGSL10B60KDPBF行情走势销售排行榜，IRGSL10B60KDPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGSL10B60KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF |   | |
IRGSL10B60KDPBF | 封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR） 描述：IGBT NPT 600V 22A TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
600V, 10A Alpha IGBT with Diode General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac | AOSMD 万国半导体 | | ||
600V, 10A Alpha IGBT with Diode General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac | AOSMD 万国半导体 | | ||
600V, 10A Alpha IGBT with Diode General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac | AOSMD 万国半导体 | | ||
AOTF10B60D 文件：659.19 Kbytes Page：9 Pages | AOSMD 万国半导体 | | ||
FRED 文件：162.29 Kbytes Page：1 Pages | NIEC | |
IRGSL10B60KDPBF产品属性
- 类型
描述
- 型号
IRGSL10B60KDPBF
- 功能描述
IGBT 晶体管 600V UltraFast 10-30kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
2900 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
22+ |
TO-262 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR |
01+03+ |
TO-262 |
226 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
23+ |
TO-262 |
2726 |
原厂原装正品 |
|||
IR |
23+24 |
TO-262 |
59630 |
主营原装MOS,二三级管,肖特基,功率场效应管 |
|||
IR |
24+ |
TO-263 |
200 |
||||
Infineon Technologies |
22+ |
TO262 |
9000 |
原厂渠道,现货配单 |
|||
Infineon Technologies |
23+ |
TO262 |
9000 |
原装正品，支持实单 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
Infineon Technologies |
25+ |
TO-262-3 长引线 I?Pak TO-26 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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IRGSL10B60KDPBF规格书下载地址
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DdatasheetPDF页码索引
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