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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrent | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-220isavailableinPbFasaLead-Free Benefits •BenchmarkEff | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrentSharing | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INFINEON/英飞凌 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
|||
INFINEON/英飞凌 |
23+ |
TO-220 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
|||
IR |
22+ |
NA |
68932 |
全新原装正品现货 |
|||
IR |
2020+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Infineon Technologies |
23+ |
TO220AB |
9000 |
原装正品，支持实单 |
|||
INFINEON |
23+ |
TO-220 |
28000 |
原装正品 |
IRGS6B60KDTRLPIC芯片相关品牌
IRGS6B60KDTRLPIC规格书下载地址
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IRGS6B60KDTRLPIC数据表相关新闻
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属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
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IRL2203NPBF厂家：IR封装：TO-220现货热卖原厂原包装，只做原装，假一赔万!!!欢迎致电上海意淼张小姐18301798078021-61316368QQ:2719102545
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2019-5-8
DdatasheetPDF页码索引
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