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IRGS4B60KD1PB价格
参考价格：￥8.4803
型号：IRGS4B60KD1PBF 品牌：IR 备注：这里有IRGS4B60KD1PB多少钱，2025年最近7天走势，今日出价，今日竞价，IRGS4B60KD1PB批发/采购报价，IRGS4B60KD1PB行情走势销售排行榜，IRGS4B60KD1PB报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF |   | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：442.69 Kbytes Page：16 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：442.69 Kbytes Page：16 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH 文件：376.95 Kbytes Page：15 Pages | IRF | |
IRGS4B60KD1PB产品属性
- 类型
描述
- 型号
IRGS4B60KD1PB
- 功能描述
IGBT 晶体管 600V LO-VCEON NON PNCH THRU COPCK IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
23+ |
TO-263 |
12700 |
买原装认准中赛美 |
|||
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
23+ |
NA |
6800 |
原装正品,力挺实单 |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
32360 |
INFINEON/英飞凌全新特价IRGS4B60KD1TRRP即刻询购立享优惠#长期有货 |
|||
IR |
25+ |
TO-263 |
65248 |
百分百原装现货 实单必成 |
|||
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INFINEON/英飞凌 |
22+ |
100000 |
代理渠道/只做原装/可含税 |
||||
Infineon/英飞凌 |
24+ |
TO-263 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
INFINEON/英飞凌 |
24+ |
TO-263 |
159936 |
明嘉莱只做原装正品现货 |
|||
IR |
1922+ |
TO-263 |
1017 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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IRGS4B60KD1PB规格书下载地址
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DdatasheetPDF页码索引
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