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IRGS15B60K价格
参考价格：￥14.6255
型号：IRGS15B60KDTRRP 品牌：International 备注：这里有IRGS15B60K多少钱，2025年最近7天走势，今日出价，今日竞价，IRGS15B60K批发/采购报价，IRGS15B60K行情走势销售排行榜，IRGS15B60K报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGS15B60K | 600V UltraFast 10-30 kHz IGBT in a D2-Pak package | Infineon 英飞凌 |   | |
ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transien | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for | IRF | | ||
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：830.08 Kbytes Page：16 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：830.08 Kbytes Page：16 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：264.6 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：264.6 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：264.6 Kbytes Page：11 Pages | IRF | | ||
600V, 15A Alpha IGBT with Diode General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac | AOSMD 万国半导体 | | ||
600V, 15A Alpha IGBT with Diode General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac | AOSMD 万国半导体 | | ||
600V, 15A Alpha IGBT with Diode General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac | AOSMD 万国半导体 | | ||
600V, 15A Alpha IGBT with Diode General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac | AOSMD 万国半导体 | | ||
ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transien | IRF | |
IRGS15B60K产品属性
- 类型
描述
- 型号
IRGS15B60K
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
11+ |
TO-263 |
800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
17+ |
TO-263 |
2559 |
||||
IR |
23+ |
TO-263 |
3300 |
原厂原装正品 |
|||
IR |
21+ |
TO-263 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
VISHAY |
24+ |
TO-263 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
25+23+ |
TO-263 |
21653 |
绝对原装正品全新进口深圳现货 |
|||
IR |
25+ |
D2-Pak |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IR |
24+ |
TO-263 |
7410 |
绝对原装现货,价格低,欢迎询购! |
|||
IR |
25+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
|||
IR |
2025+ |
SOT263 |
4365 |
全新原厂原装产品、公司现货销售 |
IRGS15B60K规格书下载地址
IRGS15B60K参数引脚图相关
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IRGS15B60K数据表相关新闻
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2019-5-8
DdatasheetPDF页码索引
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