IRGS10B60KDPBF价格

参考价格:¥10.5509

型号:IRGS10B60KDPBF 品牌:IR 备注:这里有IRGS10B60KDPBF多少钱,2025年最近7天走势,今日出价,今日竞价,IRGS10B60KDPBF批发/采购报价,IRGS10B60KDPBF行情走势销售排行榜,IRGS10B60KDPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRGS10B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

IRGS10B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:309.73 Kbytes Page:15 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:309.73 Kbytes Page:15 Pages

IRF

600V, 10A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

AOSMD

万国半导体

600V, 10A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

AOSMD

万国半导体

600V, 10A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

AOSMD

万国半导体

AOTF10B60D

文件:659.19 Kbytes Page:9 Pages

AOSMD

万国半导体

FRED

文件:162.29 Kbytes Page:1 Pages

NIEC

IRGS10B60KDPBF产品属性

  • 类型

    描述

  • 型号

    IRGS10B60KDPBF

  • 功能描述

    IGBT 晶体管 600V ULTRAFAST 10-30KHZ COPACK IGBT

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-9-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
3900
原装现货,当天可交货,原型号开票
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INTERNATI
12+
1000
原装现货价格有优势量大可以发货
INFINEON/英飞凌
22+
TO-263
100000
代理渠道/只做原装/可含税
INFINEON/英飞凌
24+
TO-263
159863
明嘉莱只做原装正品现货
INFINEON/英飞凌
25+
TO-263
32360
INFINEON/英飞凌全新特价IRGS10B60KDPBF即刻询购立享优惠#长期有货
IR
23+
NA
339
专做原装正品,假一罚百!
IR/INFINEON
18+
TO-263
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
TO-263
23+
6000
原装现货有上库存就有货全网最低假一赔万
Infineon
原厂封装
9800
原装进口公司现货假一赔百

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