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120 W, RF Power GaN HEMT

Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an

WOLFSPEED

120 W, RF Power GaN HEMT

Description Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga

WOLFSPEED

120 W, RF Power GaN HEMT

文件:1.21044 Mbytes Page:13 Pages

Cree

科锐

120 W, RF Power GaN HEMT

文件:1.21044 Mbytes Page:13 Pages

Cree

科锐

120 W, RF Power GaN HEMT

文件:1.21044 Mbytes Page:13 Pages

Cree

科锐

更新时间:2025-11-7 11:37:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CREE/科锐
15+
NA
200
受控型号特价订货只做全新进口原装-军工器
CREE
24+
N/A
11000
原装正品 有挂有货 假一赔十
FREESCALE
24+
TO-59
100
价格优势
CREE
18+
SMD
85600
保证进口原装可开17%增值税发票
CREE/科锐
23+
MOSFET
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
CREE
三年内
1983
只做原装正品
CREE/科锐
2447
20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
CREE
2308+
原厂原包
6850
十年专业专注 优势渠道商正品保证
CREE
23+
RFMOSFET
50000
全新原装正品现货,支持订货
Cree
25+23+
BGA
19488
绝对原装正品全新进口深圳现货

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