Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

文件：1.33886 Mbytes Page：17 Pages

封装/外壳：TO-247-3 包装：散装 描述：IGBT 600V 47A 206W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：散装 描述：IGBT 600V 47A 206W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

文件：1.33886 Mbytes Page：17 Pages

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

14.0 GHz to 14.5 GHz, SATCOM, Ku Band Upconverter

GENERAL DESCRIPTION The ADMV4630 is a Ku band upconverter optimized for various satellite communication (SATCOM) user terminals that operate in the 14.0 GHz to 14.5 GHz frequency range. The ADMV4630 local oscillator (LO) signal is generated internally via the on-chip Integer N (INT) synthesiz

14.0 GHz to 14.5 GHz, SATCOM, Ku Band Upconverter

GENERAL DESCRIPTION The ADMV4630 is a Ku band upconverter optimized for various satellite communication (SATCOM) user terminals that operate in the 14.0 GHz to 14.5 GHz frequency range. The ADMV4630 local oscillator (LO) signal is generated internally via the on-chip Integer N (INT) synthesiz

Varnished Chokes

文件：108.28 Kbytes Page：1 Pages

High Q, high self-resonant frequency

文件：108.28 Kbytes Page：1 Pages