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IRGIB10B60KD1价格
参考价格：￥12.4428
型号：IRGIB10B60KD1P 品牌：International 备注：这里有IRGIB10B60KD1多少钱，2025年最近7天走势，今日出价，今日竞价，IRGIB10B60KD1批发/采购报价，IRGIB10B60KD1行情走势销售排行榜，IRGIB10B60KD1报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGIB10B60KD1 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C Benefits • Benchmark E | IRF |   | |
IRGIB10B60KD1 | 600V Low-Vceon Copack IGBT in a TO-220 FullPak package | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free Benefits | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead- | IRF | | ||
封装/外壳：TO-220-3 整包 包装：卷带（TR） 描述：IGBT 600V 16A 44W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：453.78 Kbytes Page：13 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：453.78 Kbytes Page：13 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C Benefits • Benchmark E | IRF | |
IRGIB10B60KD1产品属性
- 类型
描述
- 型号
IRGIB10B60KD1
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-220 |
32048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
IR |
23+ |
TO-220 |
12700 |
买原装认准中赛美 |
|||
Infineon |
23+ |
NA |
6800 |
原装正品,力挺实单 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
32360 |
INFINEON/英飞凌全新特价IRGIB10B60KD1P即刻询购立享优惠#长期有货 |
|||
IR |
NEW |
TO-220 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
INFINEON/英飞凌 |
22+ |
100000 |
代理渠道/只做原装/可含税 |
||||
IR |
24+ |
TO-220 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
IR |
15+ |
TO-220F |
106 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
IRGIB10B60KD1芯片相关品牌
IRGIB10B60KD1规格书下载地址
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IRGIB10B60KD1数据表相关新闻
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DdatasheetPDF页码索引
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