INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A)

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power s

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A)

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

Celeron M Processor on 65 nm Process

文件：1.93023 Mbytes Page：71 Pages

Supporting the Intel Celeron processor

文件：1.3709 Mbytes Page：100 Pages

Surface Mount Fuses - Thin-Film Surface Mount

文件：37.02 Kbytes Page：1 Pages

Power Relay

文件：154.3 Kbytes Page：3 Pages

Power Relay 430 3 mm

文件：210.86 Kbytes Page：3 Pages