位置：首页 > IC中文资料第9685页 > IRG7PH35UD1MPBF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG7PH35UD1MPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE Features • Low VCE (ON) trench IGBT Technology • Low Switching Losses • Square RBSOA • Ultra-Low VFDiode • 1300Vpk Repetitive Transient Capacity • 100 of the Parts Tested for ILM • Positive VCE (ON) Temperature Co-Efficient • Tight Parameter Distribution • Lead Free Package Benefits • D | IRF |   | |
IRG7PH35UD1MPBF | Low Switching Losses 文件：295.88 Kbytes Page：9 Pages | IRF | | |
IRG7PH35UD1MPBF | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 50A 179W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
IRG7PH35UD1MPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE | Infineon 英飞凌 | | |
Low Switching Losses 文件：295.88 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) trench IGBT Technology • Low Switching Losses • Square RBSOA • Ultra-Low VFDiode • 1300Vpk Repetitive Transient Capacity • 100 of the Parts Tested for ILM • Positive VCE (ON) Temperature Co-Efficient • Tight Parameter Distribution • Lead Free Package Benefits • D | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) trench IGBT Technology • Low Switching Losses • Square RBSOA • Ultra-Low VFDiode • 1300Vpk Repetitive Transient Capacity • 100 of the Parts Tested for ILM • Positive VCE (ON) Temperature Co-Efficient • Tight Parameter Distribution • Lead Free Package Benefits • D | IRF | | ||
Low Switching Losses 文件：320.69 Kbytes Page：10 Pages | IRF | |
IRG7PH35UD1MPBF产品属性
- 类型
描述
- 型号
IRG7PH35UD1MPBF
- 制造商
International Rectifier
- 功能描述
IGBT TO-247 - Rail/Tube
- 制造商
International Rectifier
- 功能描述
IGBT 1200V 50A 179W TO247AD
- 制造商
International Rectifier
- 功能描述
TUBE/IGBT TO-247
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
3800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
13+ |
TO-247 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/IR |
2023+ |
TO-247 |
1640 |
一级代理优势现货,全新正品直营店 |
|||
ir |
25+ |
500000 |
行业低价,代理渠道 |
||||
INFINEON/英飞凌 |
2410+ |
SOP |
9000 |
十年芯路!只做原装!一直起卖! |
|||
IR |
24+ |
TO-247 |
5000 |
全新原装正品,现货销售 |
|||
Infineon Technologies |
22+ |
TO247AD |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
24+ |
n/a |
25836 |
新到现货,只做原装进口 |
|||
INFINEON |
10 |
||||||
INFINEON |
24+ |
con |
10 |
现货常备产品原装可到京北通宇商城查价格 |
IRG7PH35UD1MPBF芯片相关品牌
IRG7PH35UD1MPBF规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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