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IRG7PH35U价格
参考价格：￥17.4636
型号：IRG7PH35UD1-EP 品牌：INTERNATIONAL 备注：这里有IRG7PH35U多少钱，2025年最近7天走势，今日出价，今日竞价，IRG7PH35U批发/采购报价，IRG7PH35U行情走势销售排行榜，IRG7PH35U报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) trench IGBT Technology • Low Switching Losses • Square RBSOA • Ultra-Low VFDiode • 1300Vpk Repetitive Transient Capacity • 100 of the Parts Tested for ILM • Positive VCE (ON) Temperature Co-Efficient • Tight Parameter Distribution • Lead Free Package Benefits • D | IRF |   | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE Features • Low VCE (ON) trench IGBT Technology • Low Switching Losses • Square RBSOA • Ultra-Low VFDiode • 1300Vpk Repetitive Transient Capacity • 100 of the Parts Tested for ILM • Positive VCE (ON) Temperature Co-Efficient • Tight Parameter Distribution • Lead Free Package Benefits • D | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) trench IGBT Technology • Low Switching Losses • Square RBSOA • Ultra-Low VFDiode • 1300Vpk Repetitive Transient Capacity • 100 of the Parts Tested for ILM • Positive VCE (ON) Temperature Co-Efficient • Tight Parameter Distribution • Lead Free Package Benefits • D | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) trench IGBT technology • Low switching losses • Square RBSOA • 100 of the parts tested for ILM ① • Positive VCE (ON) temperature co-efficient • Ultra fast soft recovery co-pak diode • Tight parameter distribution • Lead-Free Benefits • High efficiency in a wide ra | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) trench IGBT technology • Low switching losses • Square RBSOA • 100 of the parts tested for ILM ① • Positive VCE (ON) temperature co-efficient • Ultra fast soft recovery co-pak diode • Tight parameter distribution • Lead-Free Benefits • High efficiency in a wide ra | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100 of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100 of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range | IRF | | ||
Low Switching Losses 文件：295.88 Kbytes Page：9 Pages | IRF | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 50A 179W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE | Infineon 英飞凌 | | ||
Low Switching Losses 文件：295.88 Kbytes Page：9 Pages | IRF | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 50A 179W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
Low Switching Losses 文件：320.69 Kbytes Page：10 Pages | IRF | | ||
Low Switching Losses | Infineon 英飞凌 | | ||
Low Switching Losses 文件：320.69 Kbytes Page：10 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：466.59 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：466.59 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：379.97 Kbytes Page：10 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：379.97 Kbytes Page：10 Pages | IRF | |
IRG7PH35U产品属性
- 类型
描述
- 型号
IRG7PH35U
- 制造商
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR
- 制造商
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR; Transistor
- Type
IGBT; DC Collector
- Current
50A; Collector Emitter Voltage
- Vces
1.2kV; Power Dissipation
- Pd
179mW; Operating Temperature
- Min
-55C; Operating Temperature
- Max
150C; No. of
- Pins
3 ;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
24+ |
NA |
3576 |
进口原装正品优势供应 |
|||
IR |
24+ |
TO-247 |
65200 |
一级代理/放心采购 |
|||
IR |
1923+ |
TO-247 |
8900 |
公司原装现货特价长期供货欢迎来电咨询 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
25+ |
TO-247 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Infineon/英飞凌 |
21+ |
TO-247-3 |
6820 |
只做原装,质量保证 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON |
24+ |
con |
10 |
现货常备产品原装可到京北通宇商城查价格 |
|||
Infineon Technologies |
22+ |
TO247AC |
9000 |
原厂渠道,现货配单 |
|||
IR |
23+ |
TO-247 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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IRG7PH35U规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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2020-1-12
DdatasheetPDF页码索引
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