INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：245.31 Kbytes Page：11 Pages

封装/外壳：TO-274AA 包装：管件 描述：IGBT 1200V 99A 350W SUPER247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)

VCES = 1200V VCE(on) typ. = 2.97V @VGE = 15V, IC = 42A Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)

VCES = 1200V VCE(on) typ. = 2.97V @VGE = 15V, IC = 42A Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：245.31 Kbytes Page：11 Pages

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)

VCES = 1200V VCE(on) typ. = 2.97V @VGE = 15V, IC = 42A Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)

VCES = 1200V VCE(on) typ. = 2.97V @VGE = 15V, IC = 42A Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

VCES = 1200V VCE(on) typ. = 2.97V @VGE = 15V, IC = 42A Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction losses • Tigh