IRG4PC50WPBF价格

参考价格:¥8.2784

型号:IRG4PC50WPBF 品牌:INTERNATIONAL 备注:这里有IRG4PC50WPBF多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4PC50WPBF批发/采购报价,IRG4PC50WPBF行情走势销售排行榜,IRG4PC50WPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4PC50WPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design a

IRF

IRG4PC50WPBF

INSULATED GATE BIPOLAR TRANSISTOR

文件:251.42 Kbytes Page:9 Pages

IRF

IRG4PC50WPBF

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 55A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR

文件:251.42 Kbytes Page:9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design

IRF

IRG4PC50WPBF产品属性

  • 类型

    描述

  • 型号

    IRG4PC50WPBF

  • 功能描述

    IGBT 晶体管 600V Warp 60-150kHz

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-9-13 11:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-247
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
13+
TO-247
10000
深圳市勤思达科技有限公司主营IR全系列原装正品,公司现货供应IRG4PC50WPBF,欢迎咨询洽谈。
IR/国际整流器
23+
TO-247
12800
正规渠道,只有原装!
IR
23+
TO-247
8000
只做原装现货
IR
24+
TO-247
6000
全新原装,一手货源,全场热卖!
Infineon(英飞凌)
2447
TO-247(AC)
105000
25个/管一级代理专营品牌!原装正品,优势现货,长期
INFINEON/英飞凌
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
IR
1923+
TO-247
6896
原装进口现货库存专业工厂研究所配单供货
IR
23+
TO247
50000
全新原装正品现货,支持订货
IR
2025+
TO-247-3
32560
原装优势绝对有货

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