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IRG4IBC30SPBF价格
参考价格：￥9.7505
型号：IRG4IBC30SPBF 品牌：INTERNATIONAL 备注：这里有IRG4IBC30SPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4IBC30SPBF批发/采购报价，IRG4IBC30SPBF行情走势销售排行榜，IRG4IBC30SPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4IBC30SPBF | INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating freqencies ( | IRF |   | |
IRG4IBC30SPBF | INSULATED GATE BIPOLAR TRANSISTOR 文件：239.44 Kbytes Page：8 Pages | IRF | | |
IRG4IBC30SPBF | 封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 23.5A 45W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：239.44 Kbytes Page：8 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Very Low 1.59V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Very Low 1.59V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：195.54 Kbytes Page：10 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT TECOVERY DIODE 文件：339.04 Kbytes Page：10 Pages | IRF | |
IRG4IBC30SPBF产品属性
- 类型
描述
- 型号
IRG4IBC30SPBF
- 功能描述
IGBT 晶体管 600V DC-1kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
两年内 |
NA |
715 |
实单价格可谈 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
23+ |
TO-220F |
8560 |
受权代理!全新原装现货特价热卖! |
|||
IR |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
1436+ |
TO220 |
490 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
21+ |
TO-220F |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
INFINEON/IR |
23+ |
TO-220FP |
50000 |
原装正品 支持实单 |
|||
IR |
25+23+ |
TO-220F |
15076 |
绝对原装正品全新进口深圳现货 |
|||
IR |
17+ |
TO-220F |
6200 |
100%原装正品现货 |
|||
Infineon Technologies |
22+ |
TO220AB FullPak |
9000 |
原厂渠道,现货配单 |
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DdatasheetPDF页码索引
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