INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.16V,@Vge=15V,Ic=6.5A)

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTde

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 13A 60W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATEDGATEBIPOLARTRANSISTOR

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc

INSULATEDGATEBIPOLARTRANSISTOR

文件：268.51 Kbytes Page：9 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 13A 60W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATEDGATEBIPOLARTRANSISTOR

文件：268.51 Kbytes Page：9 Pages

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage Benefits •Genera

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features •Fast:optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistribution andhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recovery

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFRRECOVERYDIODE

FitRate/EquivalentDeviceHours

文件：98.39 Kbytes Page：35 Pages

FitRate/EquivalentDeviceHours

文件：98.39 Kbytes Page：35 Pages