N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode powe

N-CHANNEL POWER MOSFETS

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation

Power MOSFET

FEATURES • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R

Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

Power MOSFET

• Dynamic dV/dt rating\n• 175 °C operating temperature\n• Fast switching;

45 Ampere Typical N-Channel Trench Power MOSFETs

MOSFET/场效应管

SEMICONDUCTORS

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Advanced Power MOSFET

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N-CHANNEL POWER MOSFETS

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N-CHANNEL POWER MOSFETS

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45 Ampere Typical N-Channel Trench Power MOSFETs

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45 Ampere Typical N-Channel Trench Power MOSFETs

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Power MOSFET

FEATURES • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin a

Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

VDSS = 60V RDS(on) = 0.023Ω ID = 48A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design tha

Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

FEATURES • Advanced process technology • Surface-mount (IRFZ44S, SiHFZ44S) • Low-profile through-hole (IRFZ44L, SiHFZ44L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit

N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode powe

55A 50V N CHANNEL POWER MOSFET

FEATURES ◆ Ultra Low ON Resistance ◆ Low Gate Charge ◆ Dynamic dv/dt Rating ◆ Inductive Switching Curves ◆ Peak Current vs Pulse Width Curve APPLICATION ◆ Buck Converter High Side Switch ◆ DC motor control , Ups etc , & other Application

Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin a

N-Channel MOSFET Transistor

DESCRIPTION • Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin a

50A,60V Heatsink Planar N-Channel Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220

N-CHANNEL Power MOSFET

FEATURES ◆ Ultra Low ON Resistance ◆ Low Gate Charge ◆ Dynamic dv/dt Rating ◆ Inductive Switching Curves ◆ Peak Current vs Pulse Width Curve APPLICATION ◆ Buck Converter High Side Switch ◆ DC motor control , Ups etc , & other Application

N-Channel Power MOSFET

DESCRIPTION Process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with lo

Advanced Process Technology

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

60V N-Channel MOSFET

General Description The IRFZ44NS/IRFZ44N uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rg e. It ca n be used in a wide variety of applications.

Advanced Process Technology

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides

Power MOSFET

Power MOSFET VDSS =55V, RDS(on) = 17.5 mohm, ID = 49 A N Channel

Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET짰Power MOSFET

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

HEXFET-R Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a surface mounting plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in s

55V N-Channel MOSFET

DESCRIPTION This advanced Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

60V N-Channel MOSFET

General Description The IRFZ44NS/IRFZ44N uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rg e. It ca n be used in a wide variety of applications.

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

HEXFET짰Power MOSFET

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

丝印代码：D2PAK；N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well known for,

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation