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位置：首页 > IC中文资料第885页 > IRFZ44

IRFZ44价格

参考价格：￥19.2827

型号：IRFZ44 品牌：Vishay 备注：这里有IRFZ44多少钱，2024年最近7天走势，今日出价，今日竞价，IRFZ44批发/采购报价，IRFZ44行情走势销售排行榜，IRFZ44报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFZ44

N-channel enhancement mode TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
IRFZ44

Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44

N-CHANNEL POWER MOSFETS

SamsungSamsung Group

三星三星半导体

Samsung
IRFZ44

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversiallypreferredforcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技

Vishay
IRFZ44

Power MOSFET

FEATURES •DynamicdV/dtrating •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技

Vishay
IRFZ44

Power MOSFET

文件：1.54577 Mbytes Page：9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFZ44

Power MOSFET

文件：1.54577 Mbytes Page：9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFZ44

Advanced Power MOSFET

文件：665.59 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRFZ44

45 Ampere Typical N-Channel Trench Power MOSFETs

文件：442.92 Kbytes Page：2 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI
IRFZ44

N-CHANNEL POWER MOSFETS

文件：912.37 Kbytes Page：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRFZ44

45 Ampere Typical N-Channel Trench Power MOSFETs

文件：600.9 Kbytes Page：2 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI
IRFZ44

N-CHANNEL POWER MOSFETS

文件：847.01 Kbytes Page：5 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
IRFZ44

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
IRFZ44

Power MOSFET

文件：1.62129 Mbytes Page：9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFZ44_V02

Power MOSFET

FEATURES •DynamicdV/dtrating •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技

Vishay
IRFZ44CN

isc N-Channel MOSFET Transistor

DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFZ44E

Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

VDSS=60V RDS(on)=0.023Ω ID=48A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesigntha

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44EL

Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44ELPBF

HEXFET짰 Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44ELPBF

Advanced Process Technology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44EPBF

HEXFET짰 Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44ES

Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44ESPBF

HEXFET짰 Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44ESPBF

Advanced Process Technology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44ESTRLPBF

Advanced Process Technology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44L

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay
IRFZ44L

Power MOSFET

FEATURES •Advancedprocesstechnology •Surface-mount(IRFZ44S,SiHFZ44S) •Low-profilethrough-hole(IRFZ44L,SiHFZ44L) •175°Coperatingtemperature •Fastswitching •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 Note *Thisdatasheetp

VishayVishay Siliconix

威世科技

Vishay
IRFZ44LPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay
IRFZ44N

N-channel enhancement mode TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
IRFZ44N

Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44N

Power MOSFET

PowerMOSFET VDSS=55V,RDS(on)=17.5mohm,ID=49A NChannel

TEL

TRANSYS Electronics Limited

TEL
IRFZ44N

N-CHANNEL Power MOSFET

FEATURES ◆UltraLowONResistance ◆LowGateCharge ◆Dynamicdv/dtRating ◆InductiveSwitchingCurves ◆PeakCurrentvsPulseWidthCurve APPLICATION ◆BuckConverterHighSideSwitch ◆DCmotorcontrol,Ups...etc,&otherApplication

SUNTACSuntac Electronic Corp.

Suntac Electronic Corp.

SUNTAC
IRFZ44N

N-Channel Power MOSFET

DESCRIPTION Processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomandComputerapplications.Itisalsointendedforanyapplicationswithlo

TGS

Tiger Electronic Co.,Ltd

TGS
IRFZ44N

isc N-Channel MOSFET Transistor

DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFZ44N

N-Channel MOSFET Transistor

DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRFZ44N

55A 50V N CHANNEL POWER MOSFET

FEATURES ◆UltraLowONResistance ◆LowGateCharge ◆Dynamicdv/dtRating ◆InductiveSwitchingCurves ◆PeakCurrentvsPulseWidthCurve APPLICATION ◆BuckConverterHighSideSwitch ◆DCmotorcontrol,Ups...etc,&otherApplication

FCI

Amphenol ICC

FCI
IRFZ44N

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFZ44N

50A,60V Heatsink Planar N-Channel Power MOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI
IRFZ44NL

Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknown for,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44NLPBF

HEXFET짰Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44NLPBF

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44NPBF

HEXFET-R Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44NPBF

N-Channel 60-V (D-S) MOSFET

FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET •Materialcategorization:

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRFZ44NS

Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknown for,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44NS

N-channel enhancement mode TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinasurfacemountingplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseins

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
IRFZ44NS

Advanced Process Technology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFZ44NS

isc N-Channel MOSFET Transistor

•FEATURES •WithTO-263(D2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFZ44NS

55V N-Channel MOSFET

DESCRIPTION ThisadvancedPowerMOSFETsfromInternational Rectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit, combinedwiththefastswitchingspeedandruggedized devicedesignthatHEXFETpowerMOSFETsarewell knownfor,

TGS

Tiger Electronic Co.,Ltd

TGS
IRFZ44NSPBF

HEXFET짰Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44NSPBF

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44NSPBF

N-Channel 60-V (D-S) MOSFET

FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRFZ44NSTRLPBF

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignedthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversiallypreferredforcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技

Vishay
IRFZ44R

Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44R

Power MOSFET

DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext

VishayVishay Siliconix

威世科技

Vishay
IRFZ44R

Power MOSFET

FEATURES •Advancedprocesstechnology •Ultralowon-resistance •DynamicdV/dtrating •175°Coperatingtemperature •Fastswitching •Fullyavalancherated •DropinreplacementoftheIRFZ44,SiHFZ44forlinear/ audioapplications •Materialcategorization:fordefinitionsofcompli

VishayVishay Siliconix

威世科技

Vishay
IRFZ44R_V02

Power MOSFET

FEATURES •Advancedprocesstechnology •Ultralowon-resistance •DynamicdV/dtrating •175°Coperatingtemperature •Fastswitching •Fullyavalancherated •DropinreplacementoftheIRFZ44,SiHFZ44forlinear/ audioapplications •Materialcategorization:fordefinitionsofcompli

VishayVishay Siliconix

威世科技

Vishay
IRFZ44RPBF

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ44RPBF

Power MOSFET

DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext

VishayVishay Siliconix

威世科技

Vishay

IRFZ44产品属性

  • 类型

    描述

  • 型号

    IRFZ44

  • 功能描述

    MOSFET N-Chan 60V 50 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRFZ44供应商更多...

更新时间：2024-4-26 13:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市远进半导体有限公司
IRFZ44N
IRF
23+
TO-220
5000
原装现货 假一赔十
询价
深圳市东来宝电子科技有限公司
IRFZ44NPBF
INFINEON/英飞凌
22+
TO-220
42000
郑重承诺只做原装进口现货
询价
绿盛电子(香港)有限公司
IRFZ44
IR
2015+
TO-220
19898
专业代理原装现货,特价热卖!
询价
深圳市向鸿伟业电子有限公司
IRFZ44
1635+
6000
好渠道!好价格!一片起卖!
询价
深圳市明嘉莱科技有限公司
IRFZ44VSTRLPBF
INFINEON/英飞凌
21+
D2-PAK(TO-263)
56890
明嘉莱只做原装正品现货
询价
深圳市安富世纪电子有限公司
IRFZ44
IR
21+
TO-220
50000
终端可免费提供样品,欢迎咨询
询价
深圳诚思涵科技有限公司
IRFZ44
IR
18+
TO-220
85600
保证进口原装可开17%增值税发票
询价
深圳市赛特兴科技有限公司
IRFZ44NPBF
INFINEON
2022+
TO-220
12605
正规渠道,只有原装!
询价
深圳市百视威讯电子科技有限公司
IRFZ44
23+
N/A
64910
正品授权货源可靠
询价
深圳市赛尔通科技有限公司
IRFZ44
FAIRCHILD
23+
TO-220
65480
询价

IRFZ44芯片相关品牌

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