N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.022 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCH

isc Silicon NPN Power Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Typical RDS(on) = 0.022 • Avalanche Rugged Technology • 100 Avalanche Tested • Low Gate Charge • High Current Capability