POWER MOSFET THRU-HOLE (TO-257AA)

POWER MOSFET THRU-HOLE (TO-257AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

Simple Drive Requirements

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N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.

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MOSFETs and JFETs

Simple Drive Requirements

POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A)

POWER MOSFET THRU-HOLE (TO-257AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

Simple Drive Requirements

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Single channel high reliability power MOSFETs

Celeron M Processor on 65 nm Process

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Supporting the Intel Celeron processor

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Surface Mount Fuses - Thin-Film Surface Mount

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Power Relay

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Power Relay 430 3 mm

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