Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.155 Ω(Typ.)

isc N-Channel MOSFET Transistor

文件：361.88 Kbytes Page：2 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages