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IRFUC20PBF价格
参考价格：￥3.0855
型号：IRFUC20PBF 品牌：Vishay 备注：这里有IRFUC20PBF多少钱，2026年最近7天走势，今日出价，今日竞价，IRFUC20PBF批发/采购报价，IRFUC20PBF行情走势销售排行榜，IRFUC20PBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFUC20PBF | HEXFET Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFRC20/SiHFRC20) • Str | IRF |   | |
IRFUC20PBF | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | |
IRFUC20PBF | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | |
IRFUC20PBF | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | |
IRFUC20PBF | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFUC20PBF | Power MOSFET 文件：1.13808 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
IRFUC20PBF产品属性
- 类型
描述
- 型号
IRFUC20PBF
- 功能描述
MOSFET N-Chan 600V 2.0 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay |
24+ |
NA |
3183 |
进口原装正品优势供应 |
|||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
VISHAY/威世 |
12+ |
TO-251 |
6000 |
||||
IR |
25+ |
TO-251 |
22000 |
原装现货假一罚十 |
|||
VISHAY/威世 |
2450+ |
TO-251 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY/威世 |
2022+ |
I-PAK(TO-251) |
8000 |
只做原装支持实单,有单必成。 |
|||
VISHAY/威世 |
25+ |
I-PAK(TO-251) |
880000 |
明嘉莱只做原装正品现货 |
|||
IR |
23+ |
NA |
2800 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
VISHAY |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
IR |
25+23+ |
TO-251 |
27352 |
绝对原装正品全新进口深圳现货 |
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DdatasheetPDF页码索引
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