位置：首页 > IC中文资料第1485页 > IRFU9N20D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFU9N20D | PowerMOSFET(Vdss=200V,Rds(on)max=0.38ohm,Id=9.4A) SMPSMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRFU9N20D | SMPSMOSFET SMPSMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRFU9N20D | iscN-ChannelMOSFETTransistor •FEATURES •WithTO-251(IPAK)packaging •Highspeedswitching •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Powersupply •DC-DCconverters •Motorcontrol •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | KERSEMI Kersemi Electronic Co., Ltd. | | | |
HEXFETPowerMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET(Vdss=200V,Rds(on)max=0.38ohm,Id=9.4A) SMPSMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SMPSMOSFET SMPSMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | KERSEMI Kersemi Electronic Co., Ltd. | | | |
N-Channel200V(D-S)MOSFET 文件：1.76292 Mbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-ChannelMOSFETTransistor 文件：336.4 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor 文件：336.4 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
IRFU9N20D产品属性
- 类型
描述
- 型号
IRFU9N20D
- 功能描述
MOSFET N-CH 200V 9.4A I-PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+23+ |
TO251 |
73093 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
IR |
2020+ |
原厂封装 |
350000 |
100%进口原装正品公司现货库存 |
|||
IR |
2020+ |
I-PAK |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
IR |
2024+实力库存 |
TO-251 |
107 |
只做原厂渠道 可追溯货源 |
|||
IR |
2022 |
TO-251 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
IR |
TO-251 |
265209 |
假一罚十原包原标签常备现货! |
||||
VISHAY-威世 |
24+25+/26+27+ |
TO-251-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IR |
1845+ |
TO251 |
5790 |
只做原装!量大可以订货!特价支持实单! |
|||
IR |
23+ |
NA/ |
69 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
2020+ |
TO-251 |
33230 |
公司代理品牌,原装现货超低价清仓! |
IRFU9N20D芯片相关品牌
IRFU9N20D规格书下载地址
IRFU9N20D参数引脚图相关
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DdatasheetPDF页码索引
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