位置：首页 > IC中文资料第1485页 > IRFU9N20D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFU9N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A) SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF |   | |
IRFU9N20D | SMPS MOSFET SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | KERSEMI | | |
IRFU9N20D | isc N-Channel MOSFET Transistor • FEATURES • With TO-251(IPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • DC-DC converters • Motor control • Switching applications | ISC 无锡固电 | | |
IRFU9N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A) | Infineon 英飞凌 | | |
SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free | KERSEMI | | ||
HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free | IRF | | ||
Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A) SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF | | ||
SMPS MOSFET SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | KERSEMI | | ||
N-Channel 200 V (D-S) MOSFET 文件：1.76292 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel MOSFET Transistor 文件：336.4 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor 文件：336.4 Kbytes Page：2 Pages | ISC 无锡固电 | |
IRFU9N20D产品属性
- 类型
描述
- 型号
IRFU9N20D
- 功能描述
MOSFET N-CH 200V 9.4A I-PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ir |
2023+ |
原厂封装 |
50000 |
原装现货 |
|||
IR |
2450+ |
TO-251 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
NA/ |
69 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
23+24 |
TO-251 |
59630 |
主营原装MOS,二三级管,肖特基,功率场效应管 |
|||
IR |
10+PBF |
TO-251 |
107 |
优势 |
|||
IR |
21+ |
TO-251 |
10000 |
原装现货假一罚十 |
|||
IR |
17+ |
I-Pak |
31518 |
原装正品 可含税交易 |
|||
IR |
16+ |
NA |
8800 |
原装现货,货真价优 |
|||
IR |
24+ |
8000 |
原装现货,特价销售 |
||||
IR |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
IRFU9N20D规格书下载地址
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DdatasheetPDF页码索引
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