IRFU9310价格

参考价格:¥4.2859

型号:IRFU9310PBF 品牌:Vishay 备注:这里有IRFU9310多少钱,2025年最近7天走势,今日出价,今日竞价,IRFU9310批发/采购报价,IRFU9310行情走势销售排行榜,IRFU9310报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFU9310

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

VishayVishay Siliconix

威世威世科技公司

IRFU9310

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

IRFU9310

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

IRFU9310

Power MOSFET

FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9310, SiHFR9310) • Straight lead (IRFU9310, SiHFU9310) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat

VishayVishay Siliconix

威世威世科技公司

IRFU9310

Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A)

文件:116.78 Kbytes Page:10 Pages

IRF

IRFU9310

Power MOSFET

文件:3.34757 Mbytes Page:7 Pages

KERSEMI

IRFU9310

Power MOSFET

文件:247.16 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

IRFU9310

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRFU9310

Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A)

Infineon

英飞凌

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

HEXFET POWER MOSFET

Description Third generation Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the desig

IRF

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:3.34757 Mbytes Page:7 Pages

KERSEMI

Power MOSFET

文件:267.35 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

50 Ohm, RG58, 20 AWG

Product Description RG-58/U type, 20 AWG solid .033 bare copper conductor, polyethylene insulation, Duobond® II + tinned copper braid shield (55% coverage), PVC jacket.

BELDEN

百通

Snap Rivets

文件:152.09 Kbytes Page:2 Pages

Heyco

MACHINE SCREW PAN PHILLIPS 10-32

文件:130.87 Kbytes Page:1 Pages

KEYSTONE

Keystone Electronics Corp.

Snap Rivets

文件:152.09 Kbytes Page:2 Pages

Heyco

Infra-Red Wavelength

文件:112.83 Kbytes Page:6 Pages

AVAGO

安华高

IRFU9310产品属性

  • 类型

    描述

  • 型号

    IRFU9310

  • 功能描述

    MOSFET P-Chan 400V 1.8 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-20 11:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-251
9000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
VISHAY
23+
I-PAK (TO-251)
50000
原装正品 支持实单
IR
24+
TO-251
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
NEW
TO-251
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
IR
2447
DIP SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
IR
1923+
TO-251
1805
只做原装进口正品支持实单
IR
23+
TO-251
8000
只做原装现货
IR
24+
TO-251-3
8866

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