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IRFU9310价格
参考价格:¥4.2859
型号:IRFU9310PBF 品牌:Vishay 备注:这里有IRFU9310多少钱,2025年最近7天走势,今日出价,今日竞价,IRFU9310批发/采购报价,IRFU9310行情走势销售排行榜,IRFU9310报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFU9310 | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre | VishayVishay Siliconix 威世威世科技公司 | ||
IRFU9310 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre | KERSEMI | ||
IRFU9310 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre | KERSEMI | ||
IRFU9310 | Power MOSFET FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9310, SiHFR9310) • Straight lead (IRFU9310, SiHFU9310) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat | VishayVishay Siliconix 威世威世科技公司 | ||
IRFU9310 | Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) 文件:116.78 Kbytes Page:10 Pages | IRF | ||
IRFU9310 | Power MOSFET 文件:3.34757 Mbytes Page:7 Pages | KERSEMI | ||
IRFU9310 | Power MOSFET 文件:247.16 Kbytes Page:11 Pages | VishayVishay Siliconix 威世威世科技公司 | ||
IRFU9310 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | ||
IRFU9310 | Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) | Infineon 英飞凌 | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre | KERSEMI | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre | KERSEMI | |||
HEXFET POWER MOSFET Description Third generation Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the desig | IRF | |||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre | VishayVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:3.34757 Mbytes Page:7 Pages | KERSEMI | |||
Power MOSFET 文件:267.35 Kbytes Page:13 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
50 Ohm, RG58, 20 AWG Product Description RG-58/U type, 20 AWG solid .033 bare copper conductor, polyethylene insulation, Duobond® II + tinned copper braid shield (55% coverage), PVC jacket. | BELDEN 百通 | |||
Snap Rivets 文件:152.09 Kbytes Page:2 Pages | Heyco | |||
MACHINE SCREW PAN PHILLIPS 10-32 文件:130.87 Kbytes Page:1 Pages | KEYSTONE Keystone Electronics Corp. | |||
Snap Rivets 文件:152.09 Kbytes Page:2 Pages | Heyco | |||
Infra-Red Wavelength 文件:112.83 Kbytes Page:6 Pages | AVAGO 安华高 |
IRFU9310产品属性
- 类型
描述
- 型号
IRFU9310
- 功能描述
MOSFET P-Chan 400V 1.8 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-251 |
9000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
VISHAY |
23+ |
I-PAK (TO-251) |
50000 |
原装正品 支持实单 |
|||
IR |
24+ |
TO-251 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
NEW |
TO-251 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IR |
2447 |
DIP SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
1923+ |
TO-251 |
1805 |
只做原装进口正品支持实单 |
|||
IR |
23+ |
TO-251 |
8000 |
只做原装现货 |
|||
IR |
24+ |
TO-251-3 |
8866 |
IRFU9310规格书下载地址
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DdatasheetPDF页码索引
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