Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR420, SiHFR420) • Straight lead (IRFU420, SiHFU420) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

Dynamic dV/dt Rating

文件：4.27854 Mbytes Page：7 Pages

HEXFET POWER MOSFET ( VDSS = 500V , RDS(on) = 3.0廓 , ID = 2.4A )

文件：857.33 Kbytes Page：10 Pages

High Voltage Transistors(NPN)

High Voltage Transistors NPN Silicon

High-Speed, Voltage Feedback Op Amp

文件：286.46 Kbytes Page：10 Pages

High-Speed, Voltage Feedback Op Amp

文件：286.46 Kbytes Page：10 Pages

COPS Family Users Guide Table of Contents

文件：8.5059 Mbytes Page：79 Pages

ULTRAFAST RECTIFIERS 4.0 AMPERES 200-600 VOLTS

文件：100.14 Kbytes Page：6 Pages