Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR224, SiHFR224) • Straight lead (IRFU224, SiHFU224) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

丝印代码：IPAK；iscN-Channel MOSFET Transistor

文件：340.07 Kbytes Page：2 Pages

Power MOSFET

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3.8A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

Dynamic dv/dt Rating

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

isc N-Channel MOSFET Transistor

文件：345.87 Kbytes Page：2 Pages

Power MOSFET

文件：368.2 Kbytes Page：13 Pages

HEXFET Power MOSFET

文件：511.42 Kbytes Page：10 Pages

RF Transistor

RF Transistor NPN Silicon

Low power quad op amps

DESCRIPTION The LM124/SA534/LM2902 series consists of four independent, high-gain, internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. FEATURES • Internally frequency-compensated for unity gain • Lar

Low power quad op amps

DESCRIPTION The LM124/SA534/LM2902 series consists of four independent, high-gain, internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. FEATURES • Internally frequency-compensated for unity gain • Lar

5.0 mm X 1.0 mm Series

Square Type □ 5.0 mm × 1.0 mm Series

5.0 mm X 1.0 mm Series

Square Type □ 5.0 mm × 1.0 mm Series