Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10㎂ (Max.) @ VDS= 200V Low RDS(ON) : 0.333 (Typ.)

isc N-Channel MOSFET Transistor

文件：59.01 Kbytes Page：2 Pages

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

Advanced Power MOSFET

9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

Fast switching

Features • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive

Fast switching

Features · Fast switching · 100 avalanche tested · Improved dv/dt capability Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

Low Frequencies

文件：141.01 Kbytes Page：2 Pages

COMPACT DIGITAL THERMOMETERS & THERMO-HYGROMETERS

文件：87.55 Kbytes Page：1 Pages