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IRFS41N15D价格
参考价格：￥0.0000
型号：IRFS41N15D 品牌：Int'L 备注：这里有IRFS41N15D多少钱，2025年最近7天走势，今日出价，今日竞价，IRFS41N15D批发/采购报价，IRFS41N15D行情走势销售排行榜，IRFS41N15D报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFS41N15D | Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF |   | |
IRFS41N15D | HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | |
IRFS41N15D | Isc N-Channel MOSFET Transistor 文件：299.93 Kbytes Page：2 Pages | ISC 无锡固电 | | |
High frequency DC-DC converters Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Lead-Free Applications ● High frequency DC-DC converters | Infineon 英飞凌 | | ||
HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free | IRF | | ||
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on) ≤45mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on) ≤45mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | |
IRFS41N15D产品属性
- 类型
描述
- 型号
IRFS41N15D
- 制造商
International Rectifier
- 功能描述
MOSFET N D2-PAK
- 制造商
Int'L Rectifier
- 功能描述
Trans MOSFET N-CH 150V 41A 3-Pin(2+Tab) D2PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
24+ |
TO263 |
990000 |
明嘉莱只做原装正品现货 |
|||
IR |
23+ |
TO-263 |
3000 |
专做原装正品,假一罚百! |
|||
IR |
24+ |
TO-263 |
501392 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
2023+ |
D2-PAK |
50000 |
原装现货 |
|||
IR |
TO-263 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
24+ |
TO-263 |
2903 |
只做原厂渠道 可追溯货源 |
|||
IR |
23+ |
TO-263 |
35890 |
||||
IR |
24+ |
D2-Pak |
8866 |
||||
Infineon(英飞凌) |
24+ |
D2PAK |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
IRFS41N15D规格书下载地址
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2018-12-30
DdatasheetPDF页码索引
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