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IRFS23N20D价格
参考价格：￥6.4201
型号：IRFS23N20DPBF 品牌：INTERNATIONAL 备注：这里有IRFS23N20D多少钱，2025年最近7天走势，今日出价，今日竞价，IRFS23N20D批发/采购报价，IRFS23N20D行情走势销售排行榜，IRFS23N20D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFS23N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A) SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF |   | |
IRFS23N20D | 采用 D2-Pak 封装的 200V 单 N 通道 HEXFET 功率 MOSFET | Infineon 英飞凌 | | |
SMPS MOSFET SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
High frequency DC-DC converters 文件：284.75 Kbytes Page：12 Pages | IRF | | ||
High frequency DC-DC converters 文件：284.75 Kbytes Page：12 Pages | IRF | | ||
High frequency DC-DC converters 文件：284.75 Kbytes Page：12 Pages | IRF | | ||
High frequency DC-DC converters 文件：284.75 Kbytes Page：12 Pages | IRF | | ||
Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A) SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=24A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.1Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
SMPS MOSFET SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
2.3A 20V N-Channel Enhancement-Mode MOSFET 文件：123.22 Kbytes Page：3 Pages | FCI 富加宜 | | ||
High frequency DC-DC converters 文件：284.75 Kbytes Page：12 Pages | IRF | |
IRFS23N20D产品属性
- 类型
描述
- 型号
IRFS23N20D
- 功能描述
MOSFET N-CH 200V 24A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
6562 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
24+ |
TO263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
25+ |
SOT263 |
32360 |
INFINEON/英飞凌全新特价IRFS23N20DPBF即刻询购立享优惠#长期有货 |
|||
IR |
2023+ |
D2-PAK |
50000 |
原装现货 |
|||
IR |
22+ |
D2-PAK |
8000 |
原装正品支持实单 |
|||
IR |
24+ |
65230 |
|||||
IR |
23+ |
TO263 |
3260 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
IR |
24+ |
SOP263 |
609 |
||||
Infineon(英飞凌) |
24+ |
D2PAK |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
25+ |
TO263 |
40 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
IRFS23N20D规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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