Power MOSFET

FEATURES • Low Gate Charge Qg results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Su

Power MOSFET

FEATURES • Low Gate Charge Qg results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Su

Power MOSFET

FEATURES • Low Gate Charge Qg results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Su

Power MOSFET

文件：350.04 Kbytes Page：10 Pages

Power MOSFET

文件：350.04 Kbytes Page：10 Pages

500V N-CHANNEL MOSFET

„ DESCRIPTION The UTC 11N50is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The U

11A, 500V N-CHANNEL POWER MOSFET

文件：185.39 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：217.08 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：99.59 Kbytes Page：4 Pages

Power MOSFET

文件：159.78 Kbytes Page：8 Pages